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HGTP7N60B3D, HGT1S7N60B3DS
Data Sheet
December 2001
14A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25
o
C
and 150
o
C at rated current. The IGBT is developmental type
TA49190. The diode used in anti-parallel with the IGBT is the
RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49191.
Features
• 14A, 600V, T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
Ordering Information
PART NUMBER
HGTP7N60B3D
HGT1S7N60B3DS
PACKAGE
TO-220AB ALT
TO-263AB
BRAND
JEDEC TO-263AB
G7N60B3D
G7N60B3D
G
E
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e.,
HGT1S7N60B3DS9A.
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; Pulse width limited by maximum junction temperature. Parts may current limit at less than I
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