BSS84P
SIPMOS
Small-Signal-Transistor
Feature
Product Summary
V
DS
R
DS(on)
I
D
3
·
P-Channel
·
Enhancement mode
·
Logic Level
·
Avalanche rated
·
dv/dt rated
•
Qualified according to AEC Q101
•
Halogen-free according to IEC61249-2-21
-60
8
-0.17
PG-SOT-23
V
W
A
2
1
VPS05161
Type
BSS84P
BSS84P
Package
PG-SOT-23
Tape and Reel
Marking
Gate
pin1
Drain
pin 3
H6327:3000pcs/r.
YBs
PG-SOT-23 H6433:10000pcs/r. YBs
Source
pin 2
Maximum Ratings,
at
T
A
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
A
=25°C
T
A
=70°C
Symbol
I
D
Value
-0.17
-0.14
Unit
A
Pulsed drain current
T
A
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
-0.68
2.6
0.036
-6
±20
0.36
-55... +150
55/150/56
Avalanche energy, single pulse
I
D
=-0.17 A ,
V
DD
=-25V,
R
GS
=25
W
mJ
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
=-0.17A,
V
DS
=-48V, di/dt=-200A/µs,
T
jmax
=150°C
kV/µs
V
W
°C
Gate source voltage
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Rev 2.7
Page 1
Class 0
2011-07-11
BSS84P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
-
max.
200
Unit
K/W
-
-
350
300
Electrical Characteristics,
at
T
A
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
-60
-1
Values
typ.
-
-1.5
max.
-
-2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-20µA
Zero gate voltage drain current
V
DS
=-60V,
V
GS
=0,
T
A
=25°C
V
DS
=-60V,
V
GS
=0,
T
A
=125°C
µA
-0.1
-10
-10
8
5.8
-1
-100
-100
12
8
nA
Gate-source leakage current
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-4.5V,
I
D
=-0.14A
W
Drain-source on-state resistance
V
GS
=-10V,
I
D
=-0.17A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.7
Page 2
2011-07-11
BSS84P
Electrical Characteristics,
at
T
A
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-30V,
V
GS
=-4.5V,
I
D
=-0.14A,
R
G
=25
W
V
DS
£
2*I
D
*R
DS(on)max
,
I
D
=-0.14A
V
GS
=0,
V
DS
=-25V,
f=1MHz
Symbol
Conditions
min.
0.065
-
-
-
-
-
-
-
Values
typ.
0.13
15
6
2
6.7
16.2
8.6
20.5
max.
-
19
8
3
10
24.3
12.9
30.8
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=-0.17A
V
R
=-30V,
I
F=
l
S
,
di
F
/dt=100A/µs
Q
gs
Q
gd
Q
g
V
DD
=-48V,
I
D
=-0.17A
-
-
-
-
0.25
0.3
1
-3.42
0.37
0.45
1.5
-
nC
V
DD
=-48V,
I
D
=-0.17A,
V
GS
=0 to -10V
V
(plateau)
V
DD
=-48V,
I
D
=-0.17A
V
I
S
T
A
=25°C
-
-
-
-
-
-
-
-0.93
23
10
-0.17 A
-0.68
-1.24 V
34
15
ns
nC
Rev 2.7
Page 3
2011-07-11
BSS84P
1 Power dissipation
P
tot
=
f
(T
A
)
0.38
BSS 84 P
2 Drain current
I
D
=
f
(T
A
)
parameter:
V
GS
³
10 V
BSS 84 P
-0.18
W
A
0.32
-0.14
0.28
P
tot
I
D
-0.1
-0.08
-0.06
-0.04
-0.02
0
0
20
40
60
80
100
120
0.24
0.2
0.16
0.12
0.08
0.04
0
0
-0.12
°C
160
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
-10
1
BSS 84 P
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
3
BSS 84 P
A
K/W
-10
0
t
p = 170.0µs
10
2
/
I
D
-10
-1
R
D
S(
=
)
on
V
D
S
1 ms
Z
thJA
10
1
D = 0.50
10 ms
I
D
0.20
0.10
-10
-2
DC
10
0
0.05
single pulse
0.02
0.01
-10
-3 -1
-10
-10
0
-10
1
V
-10
2
10
-1 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
4
V
DS
Rev 2.7
Page 4
t
p
2011-07-11
BSS84P
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j
= 25 °C
-0.4
BSS 84 P
P
tot
= 0.36W
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
;
T
j = 25 °C
26
BSS 84 P
A
l
k
j i
W
h
V
GS [V]
g
a
-2.5
a
b
c
d
e
f
g
22
20
-0.32
f
b
c
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-8.0
-10.0
-0.28
R
DS(on)
e
d
e
18
16
14
12
10
8
6
4
V
GS
[V] =
h
i
j
k
l
I
D
-0.24
-0.2
-0.16
-0.12
-0.08
-0.04
0
0
b
c
f
d
g
h
i
j
k
l
a
2
-4
a
b
c
d
e
f
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0
g
h
i
j
-5.5 -6.0 -6.5 -7.0
k
l
-8.0 -10.0
-0.5
-1
-1.5 -2
-2.5
-3
-3.5
V
-5
0
0
-0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32
A
-0.38
V
DS
I
D
7 Typ. transfer characteristics
parameter:
T
j = 25 °C
0.4
A
I
D
=
f
(
V
GS
); |V
DS |
³
2 x |I
D |
x
R
DS(on)max
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j = 25 °C
0.16
S
0.3
0.12
-
I
D
0.25
g
fs
V
0.1
0.2
0.08
0.15
0.06
0.1
0.04
0.05
0.02
0
0
1
2
3
4
6
0
0
0.04
0.08
0.12
0.16
A
0.22
-
V
GS
-I
D
Rev 2.7
Page 5
2011-07-11
京公网安备 11010802033920号
EEWORLD
