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BLU6H0410L-600P11

Description
RF MOSFET Transistors PWR LDMOS TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size1MB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLU6H0410L-600P11 Overview

RF MOSFET Transistors PWR LDMOS TRANSISTOR

BLU6H0410L-600P11 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Id - Continuous Drain Current1.3 A
Vds - Drain-Source Breakdown Voltage110 V
Rds On - Drain-Source Resistance143 mOhms
TechnologySi
PackagingTube
Factory Pack Quantity20
TypeRF Power MOSFET
Vgs - Gate-Source Voltage11 V
BLU6H0410L-600P;
BLU6H0410LS-600P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for radar transmitter applications and industrial
applications in the frequency range of 400 MHz to 900 MHz.
Table 1.
Application information
Typical RF performance at V
DS
= 50 V; in a common source 860 MHz narrowband test circuit;
unless otherwise specified.
Test signal
pulsed, class-AB
[1]
[1]
f
(MHz)
860
I
Dq
(mA)
1.3
P
L(AV)
(W)
-
P
L(M)
(W)
600
G
p
(dB)
20
D
(%)
58
IMD3
(dBc)
-
Measured at
= 10 %; t
p
= 1 ms.
1.2 Features and benefits
Excellent ruggedness (VSWR
40 : 1 through all phases)
Optimum thermal behavior and reliability, R
th(j-c)
= 0.15 K/W
High power gain
High efficiency
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Power amplifier for radar transmitter applications in the 400 MHz to 900 MHz
frequency range
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