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NTB45N06

Description
MOSFET 60V 45A N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size71KB,9 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTB45N06 Overview

MOSFET 60V 45A N-Channel

NTB45N06 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeCASE 418B-04
Reach Compliance Codenot_compliant
Avalanche Energy Efficiency Rating (Eas)240 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)45 A
Maximum drain current (ID)45 A
Maximum drain-source on-resistance0.026 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)150 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn80Pb20)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTP45N06, NTB45N06
Power MOSFET
45 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
http://onsemi.com
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
45 AMPERES
60 VOLTS
RDS(on) = 26 mΩ
N–Channel
D
Typical Applications
G
4
S
1
TO–220AB
CASE 221A
STYLE 5
2
3
2
3
D2PAK
CASE 418B
STYLE 2
4
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 MΩ)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
v10
ms)
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tp
v10
µs)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1.)
Total Power Dissipation @ TA = 25°C (Note 2.)
Operating and Storage Temperature Range
Symbol
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
Value
60
60
"20
"30
45
30
150
125
0.83
3.2
2.4
–55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Unit
Vdc
Vdc
Vdc
1
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP45N06
LLYWW
1
Gate
2
Drain
3
Source
1
Gate
NTB45N06
LLYWW
TJ, Tstg
2
Drain
3
Source
Single Pulse Drain–to–Source Avalanche
EAS
240
mJ
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25
Ω,
IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
NTx45N06
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTP45N06
NTB45N06
NTB45N06T4
Package
TO–220AB
D2PAK
D2PAK
Shipping
50 Units/Rail
50 Units/Rail
800/Tape & Reel
©
Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 0
Publication Order Number:
NTP45N06/D

NTB45N06 Related Products

NTB45N06 NTB45N06T4 NTP45N06
Description MOSFET 60V 45A N-Channel MOSFET 60V 45A N-Channel MOSFET 60V 45A N-Channel
package instruction SMALL OUTLINE, R-PSSO-G2 CASE 418B-04, D2PAK-3 CASE 221A-09, 3 PIN
Contacts 3 3 3
Manufacturer packaging code CASE 418B-04 418B-04 CASE 221A-09
Reach Compliance Code not_compliant not_compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 240 mJ 240 mJ 240 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V
Maximum drain current (Abs) (ID) 45 A 45 A 45 A
Maximum drain current (ID) 45 A 45 A 45 A
Maximum drain-source on-resistance 0.026 Ω 0.026 Ω 0.026 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSFM-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 2 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) 235 240 240
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W 125 W
Maximum pulsed drain current (IDM) 150 A 150 A 150 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES NO
Terminal surface Tin/Lead (Sn80Pb20) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED 30 30
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? incompatible - incompatible
Humidity sensitivity level 1 1 -
Base Number Matches - 1 1
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