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BCX-56-16-E6327

Description
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size517KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BCX-56-16-E6327 Overview

Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR

BCX-56-16-E6327 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerInfineon
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-89-4
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO100 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
Maximum DC Collector Current1 A
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current1 A
Height1.5 mm
Length4.5 mm
Minimum Operating Temperature- 65 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Pd - Power Dissipation1000 mW
Factory Pack Quantity1000
Width2.5 mm
Unit Weight0.004603 oz
BCX54 ...- BCX56...
NPN Silicon AF Transistors
For AF driver and output stages
High collector current
Low collctor-emitter saturation voltage
Complementary types: BCX51...BCX53 (PNP)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
3
1
2
2
Type
BCX54-16
BCX55
BCX55-16
BCX56
BCX56-10
BCX56-16
Marking
BD
BE
BM
BH
BK
BL
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
Package
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
1
2011-09-19

BCX-56-16-E6327 Related Products

BCX-56-16-E6327 BCX-56-E6327 BCX-55-16-E6327 BCX-55-16-E6433
Description Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer Infineon Infineon Infineon Infineon
RoHS Details Details Details Details
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-89-4 SOT-89-4 SOT-89-4 SOT-89-4
Transistor Polarity NPN NPN NPN NPN
Configuration Single Single Single Single
Collector- Emitter Voltage VCEO Max 80 V 80 V 60 V 60 V
Collector- Base Voltage VCBO 100 V 100 V 60 V 60 V
Emitter- Base Voltage VEBO 5 V 5 V 5 V 5 V
Collector-Emitter Saturation Voltage 0.5 V 0.5 V 0.5 V 0.5 V
Maximum DC Collector Current 1 A 1 A 1 A 1 A
Gain Bandwidth Product fT 100 MHz 100 MHz 100 MHz 100 MHz
Maximum Operating Temperature + 150 C + 150 C + 150 C + 150 C
Continuous Collector Current 1 A 1 A 1 A 1 A
Height 1.5 mm 1.5 mm 1.5 mm 1.5 mm
Length 4.5 mm 4.5 mm 4.5 mm 4.5 mm
Minimum Operating Temperature - 65 C - 65 C - 65 C - 65 C
Pd - Power Dissipation 1000 mW 1000 mW 1000 mW 1000 mW
Factory Pack Quantity 1000 1000 1000 4000
Width 2.5 mm 2.5 mm 2.5 mm 2.5 mm
Unit Weight 0.004603 oz 0.004603 oz 0.004603 oz 0.004603 oz
Packaging Reel Reel Reel Reel
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