BLF9G20LS-160VJ datasheet, PDF

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BLF9G20LS-160VJ: DescriptionRF MOSFET Transistors Power LDMOS transistor; Categorysemiconductor Discrete semiconductor; File Size859KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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RF MOSFET Transistors Power LDMOS transistor

BLF9G20LS-160VJ Parametric

Parameter Name	Attribute value
Product Category	RF MOSFET Transistors
Manufacturer	NXP
Technology	Si
Packaging	Cut Tape
Packaging	Reel
Factory Pack Quantity	100

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BLF9G20LS-160V

Power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS power transistor with improved video bandwidth for base station

applications at frequencies from 1800 MHz to 2000 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in a common source class-AB production test circuit.

Test signal

2-carrier W-CDMA

[1]

(MHz)

1805 to 1880

(mA)

800

(V)

L(AV)

(W)

35.5

(dB)

19.8



(%)

33.5

ACPR

(dBc)

28

[1]

Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing = 5 MHz.

1.2 Features and benefits



Excellent ruggedness

High efficiency

Low thermal resistance providing excellent thermal stability

Excellent broadband performance

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifier for multi systems base stations and multi carrier applications in the

1800 MHz to 2000 MHz frequency range

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