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BAT54T1

Description
Schottky Diodes u0026 Rectifiers 30V 400mW Single
CategoryDiscrete semiconductor    diode   
File Size54KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BAT54T1 Overview

Schottky Diodes u0026 Rectifiers 30V 400mW Single

BAT54T1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
package instructionMINIATURE, PLASTIC, CASE 425-04, 2 PIN
Contacts2
Manufacturer packaging code425-04
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresFAST SWITCHING
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Maximum power dissipation0.4 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
BAT54T1G, SBAT54T1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
http://onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ I
F
= 10 mAdc
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation, FR−5 Board
(Note 1)
@ T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Case
Thermal Resistance,
Junction−to−Ambient
Forward Current (DC)
Non−Repetitive Peak Forward Current
t
p
< 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
400
3.2
R
qJL
R
qJA
I
F
I
FSM
I
FRM
T
J
T
stg
174
492
200 Max
600
300
−55 to 125
−55 to +150
mW
mW/°C
°C/W
Value
30
Unit
V
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
1
CATHODE
2
ANODE
2
1
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
°C/W
mA
mA
mA
°C
°C
SB
M
G
= Device Code
= Date Code
= Pb−Free Package
1
SBM
G
G
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR-5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
BAT54T1G
SBAT54T1G
Package
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
Shipping
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
April, 2014 − Rev. 10
Publication Order Number:
BAT54T1/D

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