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BUK9K5R6-30EX

Description
CAN Interface IC
Categorysemiconductor    Discrete semiconductor   
File Size713KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK9K5R6-30EX Overview

CAN Interface IC

BUK9K5R6-30EX Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56D-8
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V, 30 V
Id - Continuous Drain Current40 A, 40 A
Rds On - Drain-Source Resistance3.9 mOhms, 3.9 mOhms
Vgs th - Gate-Source Threshold Voltage1.4 V, 1.4 V
Vgs - Gate-Source Voltage10 V, 10 V
Qg - Gate Charge22.6 nC, 22.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationDual
Channel ModeEnhancement
PackagingMouseReel
PackagingCut Tape
PackagingReel
Fall Time22.4 ns, 22.4 ns
Pd - Power Dissipation64 W
Rise Time25.2 ns, 25.2 ns
Factory Pack Quantity1500
Transistor Type2 N-Channel
Typical Turn-Off Delay Time30.1 ns, 30.1 ns
Typical Turn-On Delay Time13.8 ns, 13.8 ns
BUK9K5R6-30E
2 September 2015
Dual N-channel 30 V, 5.8 mΩ logic level MOSFET
Product data sheet
1. General description
Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using
TrenchMOS technology. This product has been designed and qualified to AEC Q101
standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 Compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 10 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
30
40
64
Unit
V
A
W
Static characteristics FET1 and FET2
drain-source on-state
resistance
gate-drain charge
-
4.7
5.8
Dynamic characteristics FET1 and FET2
Q
GD
I
D
= 10 A; V
DS
= 24 V; V
GS
= 5 V;
T
j
= 25 °C;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package
-
9.2
-
nC
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