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BUK9Y12-100E115

Description
MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size294KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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MOSFET

BUK9Y12-100E115 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
TechnologySi
Number of Channels1 Channel
Transistor PolarityN-Channel
ConfigurationSingle
Transistor Type1 N-Channel
LF
BUK9Y15-100E
9 May 2013
PA
K
56
N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS
technology. This product has been designed and qualified to AEC Q101 standard for use
in high performance automotive applications.
2. Features and benefits
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with V
GS(th)
rating of greater than 0.5 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 20 A; T
j
= 25 °C;
Fig. 11
Min
-
-
-
Typ
-
-
-
Max
100
69
195
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
12.1
15
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 20 A; V
DS
= 80 V;
Fig. 13; Fig. 14
-
16
-
nC
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