BLC9G20LS-120V
Power LDMOS transistor
Rev. 5 — 24 May 2017
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor with enhanced video bandwidth for base station
applications at frequencies from 1805 MHz to 1995 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
1805 to 1880
I
Dq
(mA)
700
V
DS
(V)
28
P
L(AV)
(W)
30
G
p
(dB)
19.2
D
(%)
31
ACPR
5M
(dBc)
33
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF per carrier;
5 MHz carrier spacing.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical)
Designed for broadband operation (1805 MHz to 1995 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
1805 MHz to 1995 MHz frequency range
BLC9G20LS-120V
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
[1]
Pinning
Description
drain1
drain2
gate1
gate2
video decoupling
video decoupling
source
[1]
Simplified outline
5
1
2
6
Graphic symbol
1, 2, 5, 6
7
3, 4
7
aaa-016345
3
4
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLC9G20LS-120V
-
air cavity plastic earless flanged package; 6 leads
Version
SOT1275-1
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the online MTF
calculator.
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
T
case
= 80
C;
P
L
= 30 W
Typ
0.47
Unit
K/W
thermal resistance from junction to case
Symbol Parameter
BLC9G20LS-120V
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
2 of 15
BLC9G20LS-120V
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C per section, unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 120 mA
V
DS
= 28 V; I
D
= 700 mA
V
GS
= 0 V; V
DS
= 32 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 6 A
Min
65
1.5
-
-
-
-
-
-
Typ Max
-
1.9
2.2
-
25
-
4.3
-
3.1
-
2.8
-
280
-
Unit
V
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 1.2 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 4.2 A
0.12 -
Table 7.
RF characteristics
Test signal: 2-carrier W-CDMA; 3GPP test model 1 with 64 DPCH; PAR = 8.4 dB at 0.01 %
probability on the CCDF; f
1
= 1807.5 MHz; f
2
= 1812.5 MHz; f
3
= 1872.5 MHz; f
4
= 1877.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 700 mA; T
case
= 25
C; unless otherwise specified; in a water
cooled class-AB test circuit.
Symbol
G
p
D
RL
in
Parameter
power gain
drain efficiency
input return loss
Conditions
P
L(AV)
= 30 W
P
L(AV)
= 30 W
P
L(AV)
= 30 W
P
L(AV)
= 30 W
Min
17.8
29
-
-
Typ
19.2
31
13
33
Max
-
-
9
28
Unit
dB
%
dB
dBc
ACPR
5M
adjacent channel power ratio (5 MHz)
7. Test information
7.1 Ruggedness in class-AB operation
The BLC9G20LS-120V is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 700 mA; P
L
= 100 W (CW); f = 1805 MHz.
BLC9G20LS-120V
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
3 of 15
BLC9G20LS-120V
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data of the device; I
Dq
= 700 mA; V
DS
= 28 V; pulsed CW (t
p
= 100
s;
= 10 %).
f
(MHz)
1805
1840
1880
1930
1960
1990
1805
1840
1880
1930
1960
1990
[1]
[2]
Z
S
[1]
()
1.6
j5.4
2.4
j6.0
2.7
j6.2
3.7
j7.6
3.8
j8.0
5.0
j7.9
1.6
j5.4
2.4
j6.0
2.7
j6.2
3.7
j7.6
3.8
j8.0
5.0
j7.9
Z
L
[1]
()
1.6
j4.2
1.5
j4.0
1.6
j4.1
1.4
j3.9
1.5
j4.2
1.4
j4.1
2.9
j2.6
2.8
j2.6
2.5
j2.4
2.5
j2.7
2.0
j2.6
2.0
j2.7
P
L
[2]
(W)
169.6
170.3
168.0
167.9
166.8
162.1
117.0
116.5
110.7
115.4
113.6
113.6
D
[2]
(%)
59.4
59.0
59.6
58.3
57.3
57.2
70.1
69.9
69.8
68.2
67.5
66.7
G
p
[2]
(dB)
16.3
16.2
16.5
16.3
16.5
16.6
18.6
18.7
19.0
19.0
19.0
19.1
Maximum power load
Maximum drain efficiency load
Z
S
and Z
L
defined in
Figure 1.
at 3 dB gain compression.
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLC9G20LS-120V
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
4 of 15
BLC9G20LS-120V
Power LDMOS transistor
7.3 VBW in a class-AB operation
The BLC9G20LS-120V shows 75 MHz (typical) video bandwidth (IMD third-order
intermodulation inflection point) in a class-AB test circuit in the 1805 MHz to 1880 MHz
band at V
DS
= 28 V and I
Dq
= 700 mA.
aaa-017684
0
IMD
(dBc)
-20
IMD3
IMD5
-40
(1)
(2)
(1)
(2)
(1)
(2)
IMD7
-60
-80
1
10
caring spacing (MHz)
10
2
V
DS
= 28 V; I
Dq
= 700 mA.
(1) low
(2) high
Fig 2.
VBW capability in class-AB test circuit
BLC9G20LS-120V
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2017. All rights reserved.
Product data sheet
Rev. 5 — 24 May 2017
5 of 15
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