BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
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These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
COLLECTOR
3
1
BASE
2
EMITTER
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
45
50
6.0
100
Unit
V
V
V
mAdc
1
3
2
CASE 463
SC−75/SOT−41
6
STYLE 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
1. FR−4 @ min pad.
2. FR−4 @ 1.0
×
1.0 in pad.
Symbol
P
D
200
1.6
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
400
−55 to
+150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
xx = Device Code
M = Date Code
Max
Unit
xxM
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 1
Publication Order Number:
BC847ATT1/D
BC847ATT1, BC847BTT1, BC847CTT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mA)
Collector −Emitter Breakdown Voltage
(I
C
= 10
mA,
V
EB
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mA)
Emitter −Base Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current (V
CB
= 30 V)
(V
CB
= 30 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mA,
V
CE
= 5.0 V)
h
FE
BC847A
BC847B
BC847C
BC847A
BC847B
BC847C
V
CE(sat)
V
BE(sat)
V
BE(on)
−
−
−
110
200
420
−
−
−
−
580
−
90
150
270
180
290
520
−
−
0.7
0.9
660
−
−
−
−
220
450
800
0.25
0.6
−
−
700
770
V
V
mV
−
V
(BR)CEO
BC847 Series
V
(BR)CES
BC847 Series
V
(BR)CBO
BC847 Series
V
(BR)EBO
BC847 Series
I
CBO
6.0
−
−
−
−
−
−
15
5.0
nA
mA
50
−
−
V
50
−
−
V
45
−
−
V
V
Symbol
Min
Typ
Max
Unit
(I
C
= 2.0 mA, V
CE
= 5.0 V)
Collector −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Collector −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
Base −Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
Base −Emitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
Base −Emitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
f
T
C
obo
NF
100
−
−
−
−
−
−
4.5
10
MHz
pF
dB
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2
BC847ATT1, BC847BTT1, BC847CTT1
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.5
50
1.0
20
2.0
5.0 10
I
C
, COLLECTOR CURRENT (mAdc)
100
200
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
I
C
, COLLECTOR CURRENT (mAdc)
50 70 100
V
BE(on)
@ V
CE
= 10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
VCE , COLLECTOR−EMITTER VOLTAGE (V)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
2.0
T
A
= 25°C
1.6
I
C
= 200 mA
1.2
I
C
=
I
C
=
10 mA 20 mA
0.8
I
C
= 50 mA
I
C
= 100 mA
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0.4
0
0.02
0.1
1.0
I
B
, BASE CURRENT (mA)
10
20
0.2
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
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3
BC847ATT1, BC847BTT1, BC847CTT1
BC847
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 5. Normalized Thermal Response
f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
10
7.0
C, CAPACITANCE (pF)
5.0
C
ib
T
A
= 25°C
400
300
200
3.0
C
ob
2.0
100
80
60
40
30
20
0.5 0.7
1.0
V
CE
= 10 V
T
A
= 25°C
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10
2.0
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
30
50
Figure 6. Capacitances
Figure 7. Current−Gain − Bandwidth Product
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4
BC847ATT1, BC847BTT1, BC847CTT1
ORDERING INFORMATION
Device
BC847ATT1
BC847BTT1
BC847BTT1G
BC847CTT1
BC847CTT1G
Marking
1E
1F
1F
1G
1G
Package
SC−75/SOT−416
SC−75/SOT−416
SC−75/SOT−416
(Pb−Free)
SC−75/SOT−416
SC−75/SOT−416
(Pb−Free)
3,000 / Tape & Reel
3,000 / Tape & Reel
Shipping
†
3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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