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BC-860CW-E6327

Description
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size857KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BC-860CW-E6327 Overview

Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

BC-860CW-E6327 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerInfineon
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max45 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current0.1 A
Gain Bandwidth Product fT250 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current0.1 A
Height0.9 mm
Length2 mm
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingReel
Pd - Power Dissipation250 mW
Factory Pack Quantity3000
Width1.25 mm
Unit Weight0.000176 oz
BC857...-BC860...
PNP Silicon AF Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 hz and 15 kHz
Complementary types:
BC847...-BC850... (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
1)
1
BC857BL3
is not qualified according AEC Q101
Type
BC857A
BC857B
BC857BL3*
BC857BW
BC857C
BC857CW
BC858A
BC858B
BC858BW
BC858C
BC858CW
BC859C
BC860B
BC860BW
BC860CW
Marking
3Es
3Fs
3F
3Fs
3Gs
3Gs
3Js
3Ks
3Ks
3Ls
3Ls
4Cs
4Fs
4Fs
4Gs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT323
* Not qualified according AEC Q101
1
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