BFY450
HiRel
NPN Silicon RF Transistor
4
HiRel
Discrete and Microwave Semiconductor
For Medium Power Amplifiers
Compression Point P
-1dB
=19dBm 1.8 GHz
Max. Available Gain G
ma
= 16dB at 1.8 GHz
Hermetically sealed microwave package
Transition Frequency
f
T = 20 GHz
SIEGET 25-Line
Infineon Technologies Grounded Emitter Transistor-
25
GHz fT-Line
Space Qualified
ESA/SCC Detail Spec. No.: 5611/008
Type Variant No. 03
3
1
2
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
Type
Marking
Ordering Code
Pin Configuration
1
2
E
3
B
4
E
Package
BFY450 (ql)
-
see below
C
Micro-X
(ql) Quality Level:
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
IFAG IMM RPD D HIR
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V2, February 2011
BFY450
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
1), 2)
T
S
110°C
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-soldering point
2)
R
th JS
<
145
K/W
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
op
T
stg
Values
4.5
15
1.5
100
10
450
175
-65...+175
-65...+175
Unit
V
V
V
mA
mA
mW
C
C
C
Notes.:
1) At T
S
= + 110 °C. For T
S
> + 110 °C derating is required.
2) T
S
is measured on the collector lead at the soldering point to the pcb.
Electrical Characteristics
at T
A
=25°C; unless otherwise specified
Parameter
Symbol
min.
DC Characteristics
Collector-base cutoff current
V
CB
= 5 V, I
E
= 0
Collector-emitter cutoff current
1.)
V
CE
= 4.5 V, I
B
= 1.0µA
Emitter-base cuttoff current
V
EB
= 1.5 V, I
C
= 0
DC current gain
I
C
= 20 mA, V
CE
= 1 V
Notes:
1.) This Test assures V(BR)
CE0
> 4.5V
h
FE
50
90
150
-
I
EBO
-
-
I
CEX
-
-
200
(t.b.d.)
50
A
µA
I
CBO
-
-
100
nA
Values
typ.
max.
Unit
IFAG IMM RPD D HIR
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V2, February 2011
BFY450
Micro-X Package
4
Edition 2011-02
3
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
1
2
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG IMM RPD D HIR
4 of 4
V2, February 2011
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