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MMBTA06_Q

Description
Bipolar Transistors - BJT SOT-23 NPN GEN PUR
Categorysemiconductor    Discrete semiconductor   
File Size400KB,11 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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MMBTA06_Q Overview

Bipolar Transistors - BJT SOT-23 NPN GEN PUR

MMBTA06_Q Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerFairchild
RoHSNo
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO80 V
Emitter- Base Voltage VEBO4 V
Maximum DC Collector Current0.5 A
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current0.5 A
Height0.93 mm
Length2.92 mm
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
Pd - Power Dissipation350 mW
Factory Pack Quantity3000
Width1.3 mm
Unit Weight0.000282 oz
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MMBTA06_Q Related Products

MMBTA06_Q MMBTA06_D87Z MMBTA06
Description Bipolar Transistors - BJT SOT-23 NPN GEN PUR Bipolar Transistors - BJT NPN Gen Purp Amp Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 0.1uF 50volts X7R 10%
Configuration Single SINGLE SINGLE
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Maker - Fairchild Fairchild
Parts packaging code - SOT-23 SOT-23
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3
Reach Compliance Code - compliant compliant
ECCN code - EAR99 EAR99
Maximum collector current (IC) - 0.5 A 0.5 A
Collector-emitter maximum voltage - 80 V 80 V
Minimum DC current gain (hFE) - 100 100
JESD-30 code - R-PDSO-G3 R-PDSO-G3
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 3 3
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 NOT SPECIFIED
Polarity/channel type - NPN NPN
Maximum power dissipation(Abs) - 0.225 W 0.225 W
Certification status - Not Qualified Not Qualified
surface mount - YES YES
Terminal surface - Matte Tin (Sn) Matte Tin (Sn)
Terminal form - GULL WING GULL WING
Terminal location - DUAL DUAL
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 100 MHz 100 MHz
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