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ZTX1048A

Description
Bipolar Transistors - BJT NPN High Gain u0026 Crnt
Categorysemiconductor    Discrete semiconductor   
File Size120KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZTX1048A Overview

Bipolar Transistors - BJT NPN High Gain u0026 Crnt

ZTX1048A Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-92-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max17.5 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current4 A
Gain Bandwidth Product fT150 MHz
Maximum Operating Temperature+ 150 C
Continuous Collector Current4 A
DC Collector/Base Gain hfe Min280 at 10 mA at 2 V, 300 at 500 mA at 2 V, 300 at 1 A at 2 V, 220 at 4 A at 2 V, 50 at 20 A at 2 V
DC Current Gain hFE Max280 at 10 mA at 2 V
Height4.01 mm
Length4.77 mm
Minimum Operating Temperature- 55 C
PackagingBulk
Pd - Power Dissipation1 W
Factory Pack Quantity4000
Width2.41 mm
Unit Weight0.016000 oz
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 – FEBRUARY 1995
FEATURES
* V
CEV
=50V
* Very Low Saturation Voltages
* High Gain
* 20 Amps pulse current
APPLICATIONS
* LCD Backlight Convertors
* Emergency Lighting
* DC-DC Convertors
ZTX1048A
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
ZTX1048A
50
17.5
5
20
4
500
1
-55 to +200
UNIT
V
V
V
A
A
mA
W
°C

ZTX1048A Related Products

ZTX1048A ZTX1048ASTZ
Description Bipolar Transistors - BJT NPN High Gain u0026 Crnt Bipolar Transistors - BJT NPN High Gain u0026 Crnt
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer Diodes Diodes
RoHS Details Details
Mounting Style Through Hole Through Hole
Package / Case TO-92-3 TO-92-3
Transistor Polarity NPN NPN
Configuration Single Single
Collector- Emitter Voltage VCEO Max 17.5 V 17.5 V
Collector- Base Voltage VCBO 50 V 50 V
Emitter- Base Voltage VEBO 5 V 5 V
Maximum DC Collector Current 4 A 4 A
Gain Bandwidth Product fT 150 MHz 150 MHz
Maximum Operating Temperature + 150 C + 150 C
Continuous Collector Current 4 A 4 A
DC Collector/Base Gain hfe Min 280 at 10 mA at 2 V, 300 at 500 mA at 2 V, 300 at 1 A at 2 V, 220 at 4 A at 2 V, 50 at 20 A at 2 V 280 at 10 mA at 2 V, 300 at 500 mA at 2 V, 300 at 1 A at 2 V, 220 at 4 A at 2 V, 50 at 20 A at 2 V
DC Current Gain hFE Max 280 at 10 mA at 2 V 280 at 10 mA at 2 V
Height 4.01 mm 4.01 mm
Length 4.77 mm 4.77 mm
Minimum Operating Temperature - 55 C - 55 C
Packaging Bulk Reel
Pd - Power Dissipation 1 W 1 W
Factory Pack Quantity 4000 2000
Width 2.41 mm 2.41 mm
Unit Weight 0.016000 oz 0.016000 oz

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