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GP30B

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size56KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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GP30B Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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GP30A
THRU
GP30M
3.0 Amp Glass
Passivated Junction
Rectifiers
50 to 1000 Volts
DO-201AD
High temperature metallurgically bonded construction
Glass passivated cavity-free junction, Plastic Case
3.0 amperes operation at T
A
=55
O
C and with no
thermal runaway.
Typical I
R
less than 0.1uA
Maximum Ratings
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Typical Thermal Resistance: 20
O
C/W Junction to Lead
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
I
F(AV)
I
FSM
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
T
A
= 55 C
8.3ms, half sine
O
D
MCC
Part Number
GP30A
GP30B
GP30D
GP30G
GP30J
GP30K
GP30M
Maximum
RMS Voltage
35V
70V
140V
280V
420V
560V
700V
3.0 A
125A
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Average
Forward Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
GP30A -30B
GP30D -30M
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
C
DIMENSIONS
INCHES
MIN
---
---
.048
1.000
MM
MIN
---
---
1.20
25.40
V
F
1.2V
1.1V
5.0uA
100uA
40pF
I
FM
= 3.0A;
T
A
=25
O
C
T
A
=150
O
C
Measured at
1.0MHz, V
R
=4.0V
DIM
A
B
C
D
MAX
.370
.250
.052
---
MAX
9.50
6.40
1.30
---
NOTE
I
R
C
J
www.mccsemi.com

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GP30B GP30A GP30G GP30D GP30J GP30K GP30M
Description 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
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