INTEGRATED CIRCUITS
DATA SHEET
TDA8542TS
2
×
0.7 W BTL audio amplifier
Product specification
Supersedes data of 1997 Nov 17
1998 Mar 25
NXP Semiconductors
Product specification
2
×
0.7 W BTL audio amplifier
FEATURES
•
Flexibility in use
•
Few external components
•
Low saturation voltage of output stage
•
Gain can be fixed with external resistors
•
Standby mode controlled by CMOS compatible levels
•
Low standby current
•
No switch-on/switch-off plops
•
High supply voltage ripple rejection
•
Protected against electrostatic discharge
•
Outputs short-circuit safe to ground, V
CC
and across the
load
•
Thermally protected.
QUICK REFERENCE DATA
SYMBOL
V
CC
I
q
I
stb
P
o
THD
SVRR
PARAMETER
supply voltage
quiescent current
standby current
output power
total harmonic distortion
supply voltage ripple rejection
THD = 10%; R
L
= 16
Ω;
V
CC
= 5 V
P
o
= 0.4 W
V
CC
= 5 V
CONDITIONS
−
−
THD = 10%; R
L
= 8
Ω;
V
CC
= 3.3 V 0.45
0.6
−
50
MIN.
2.2
5
15
−
0.55
0.7
0.15
−
GENERAL DESCRIPTION
TDA8542TS
The TDA8542TS is a two channel audio power amplifier
for an output power of 2
×
0.7 W with a 16
Ω
load at a 5 V
supply. At a low supply voltage of 3.3 V an output power of
0.6 W with an 8
Ω
load can be obtained. The circuit
contains two Bridge-Tied Load (BTL) amplifiers with a
complementary PNP-NPN output stage and standby/mute
logic. The TDA8542TS is available in a SSOP20 package.
APPLICATIONS
•
Portable consumer products
•
Personal computers
•
Motor-driver (servo).
TYP.
MAX.
18
22
10
−
−
−
−
UNIT
V
mA
μA
W
W
%
dB
ORDERING INFORMATION
TYPE
NUMBER
TDA8542TS
PACKAGE
NAME
DESCRIPTION
VERSION
SOT266-1
SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm
1998 Mar 25
2
NXP Semiconductors
Product specification
2
×
0.7 W BTL audio amplifier
BLOCK DIAGRAM
TDA8542TS
handbook, full pagewidth
VCCL VCCR
20
11
−
INL−
INL+
17
16
−
+
R
VCCL
R
18
OUTL−
n.c.
n.c.
n.c.
n.c.
n.c.
2
7
9
12
19
20 kΩ
−
−
+
3
OUTL+
20 kΩ
STANDBY/MUTE LOGIC
−
INR−
INR+
14
15
TDA8542TS
13
OUTR−
−
+
R
VCCR
R
20 kΩ
5
20 kΩ
4
6
−
−
+
8
OUTR+
SVR
MODE
BTL/SE
STANDBY/MUTE LOGIC
1
10
MBK445
LGND RGND
Fig.1 Block diagram.
1998 Mar 25
3
NXP Semiconductors
Product specification
2
×
0.7 W BTL audio amplifier
PINNING
SYMBOL
LGND
n.c.
OUTL+
MODE
SVR
BTL/SE
n.c.
OUTR+
n.c.
RGND
V
CCR
n.c.
OUTR−
INR−
INR+
INL+
INL−
OUTL−
n.c.
V
CCL
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DESCRIPTION
ground, left channel
not connected
positive loudspeaker terminal, left
channel
operating mode select (standby,
mute, operating)
half supply voltage, decoupling
ripple rejection
BTL loudspeaker or SE
headphone operation
not connected
positive loudspeaker terminal,
right channel
not connected
ground, right channel
supply voltage, right channel
not connected
negative loudspeaker terminal,
right channel
negative input, right channel
positive input, right channel
positive input, left channel
negative input, left channel
negative loudspeaker terminal,
left channel
not connected
supply voltage, left channel
OUTR+
n.c.
8
9
handbook, halfpage
TDA8542TS
LGND
n.c.
OUTL+
MODE
SVR
BTL/SE
n.c.
1
2
3
4
5
20 VCCL
19 n.c.
18 OUTL−
17 INL−
16 INL+
TDA8542TS
6
7
15 INR+
14 INR−
13 OUTR−
12 n.c.
11 VCCR
MBK453
RGND 10
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
The TDA8542TS is a 2
×
0.7 W BTL audio power amplifier
capable of delivering 2
×
0.7 W output power to a 16
Ω
load at THD = 10% using a 5 V power supply. Using the
MODE pin the device can be switched to standby and
mute condition. The device is protected by an internal
thermal shutdown protection mechanism. The gain can be
set within a range from 6 to 30 dB by external feedback
resistors.
Power amplifier
The power amplifier is a Bridge-Tied Load (BTL) amplifier
with a complementary PNP-NPN output stage.
The voltage loss on the positive supply line is the
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of a NPN power
1998 Mar 25
4
transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and with a 16
Ω
loudspeaker an output
power of 0.7 W can be delivered.
Mode select pin
The device is in the standby mode (with a very low current
consumption) if the voltage at the MODE pin is
>(V
CC
−
0.5 V), or if this pin is floating. At a MODE voltage
level of less than 0.5 V the amplifier is fully operational.
In the range between 1.5 V and V
CC
−
1.5 V the amplifier
is in mute condition. The mute condition is useful to
suppress plop noise at the output caused by charging of
the input capacitor.
NXP Semiconductors
Product specification
2
×
0.7 W BTL audio amplifier
Headphone connection
A headphone can be connected to the amplifier using two
coupling capacitors for each channel. The common
GND pin of the headphone is connected to the ground of
the amplifier (see Fig.13). In this case the BTL/SE pin must
be either at a logic HIGH level or not connected at all.
The two coupling capacitors can be omitted if it is allowed
to connect the common GND pin of the headphone jack
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CC
V
I
I
ORM
T
stg
T
amb
V
sc
P
tot
supply voltage
input voltage
repetitive peak output current
storage temperature
operating ambient temperature
AC and DC short-circuit safe voltage
total power dissipation
non-operating
PARAMETER
CONDITIONS
operating
MIN.
−0.3
−0.3
−
−55
−40
−
−
TDA8542TS
not to ground, but to a voltage level of
1
⁄
2
V
CC
. See Fig.4 for
the application diagram. In this case the BTL/SE pin must
be either at a logic LOW level or connected to ground.
If the BTL/SE pin is at a LOW level, the power amplifier for
the positive loudspeaker terminal is always in mute
condition.
MAX.
+18
1
+150
+85
10
1.12
V
A
V
CC
+ 0.3 V
UNIT
°C
°C
V
W
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611-E”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. See Section “Thermal design considerations”.
Table 1
Maximum ambient temperature at different conditions
CONTINUOUS SINE WAVE DRIVEN
V
CC
(V)
3.3
3.3
5
5
Note
1. See Section “Thermal design considerations”.
R
L
(Ω)
4
8
8
16
P
o
(W)
2
×
0.65
2
×
0.55
2
×
1.2
2
×
0.70
P
max
(W)
1.12
0.60
1.33
0.80
T
amb(max)
(°C)
27
(1)
84
−
(1)
62
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
110
(1)
UNIT
K/W
1998 Mar 25
5
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