AUTOMOTIVE GRADE
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
G
TO-220AB
AUIRL1404Z
AUIRL1404Z
AUIRL1404ZS
AUIRL1404ZL
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
HEXFET
®
Power MOSFET
40V
2.5m
3.1m
180A
160A
D
S
G
D
2
Pak
AUIRL1404ZS
G
S
D
TO-262
AUIRL1404ZL
G
Gate
D
Drain
S
Source
Base part number
AUIRL1404Z
AUIRL1404ZL
AUIRL1404ZS
Package Type
TO-220
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRL1404Z
AUIRL1404ZL
AUIRL1404ZS
AUIRL1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
180
130
160
790
200
1.3
± 16
190
490
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-27
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss eff.
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
40
–––
–––
–––
–––
1.4
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.034
2.5
–––
–––
–––
–––
–––
–––
–––
–––
75
28
40
19
180
30
49
4.5
7.5
AUIRL1404Z/S/L
Max. Units
Conditions
–––
V V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
3.1
V
GS
= 10V, I
D
= 75A
**
4.7 m V
GS
= 5.0V, I
D
= 40A
5.9
VGS = 4.5V, ID = 40A
2.7
V V
DS
= V
GS
, I
D
= 250µA
–––
S V
DS
= 10V, I
D
= 75A**
20
V
DS
= 40V, V
GS
= 0V
µA
250
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
110
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 75A**
nC
V
DS
= 32V
V
GS
= 5.0V
V
DD
= 20V
I
D
= 75A**
ns
R
G
= 4.0
V
GS
= 5.0V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 75A**,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 75A** , V
DD
= 20V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
––– 5080 –––
––– 970 –––
––– 570 –––
––– 3310 –––
––– 870 –––
––– 1280 –––
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
26
18
180
790
1.3
39
27
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.066mH, R
G
= 25, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population 100% tested to this value in production.
This
is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994
TO-220Pak
device will have an Rth value of 0.65°C/W.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 160A. Note that current l
imitations arising from heating of the device leads may occur with some lead mounting arrangements.
**
All AC and DC test conditions based on former package limited current of 75A.
2
2015-10-27
AUIRL1404Z/S/L
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
1000
TOP
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
3.0V
10
10
3.0V
60µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
1
1
0.1
1
60µs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
T J = 175°C
100
200
Gfs, Forward Transconductance (S)
ID , Drain-to-Source Current
)
T J = 25°C
150
100
T J = 175°C
10
T J = 25°C
VDS = 10V
60µs PULSE WIDTH
2
3
4
5
6
7
8
9
10
50
V DS = 10V
0
0
50
100
150
200
ID ,Drain-to-Source Current (A)
1.0
VGS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Transconductance
vs. Drain Current
3
2015-10-27
AUIRL1404Z/S/L
100000
Coss = Cds + Cgd
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
6.0
ID = 75A
5.0
4.0
3.0
2.0
1.0
0.0
VDS = 32V
VDS = 20V
C, Capacitance(pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
20
40
60
80
VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
1000.00
10000
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
T J = 175°C
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
100µsec
100
1msec
100.00
10.00
T J = 25°C
VGS = 0V
0.0
0.5
1.0
1.5
2.0
2.5
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
10msec
1.00
VSD , Source-to-Drain Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
2015-10-27
AUIRL1404Z/S/L
200
Limited By Package
150
ID, Drain Current (A)
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 75A
VGS = 10V
1.5
100
1.0
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
C
1
2
3
3
C
Ri (°C/W)
0.212
0.277
0.261
0.01
i
(sec)
0.000213
0.001234
0.021750
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
iRi
Ci=
iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-10-27
京公网安备 11010802033920号
EEWORLD
