BAV99LT1G,
SBAV99LT1G,
BAV99LT3G,
SBAV99LT3G
Dual Series
Switching Diode
Features
http://onsemi.com
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(Each Diode)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
t = 1.0
ms
t = 1.0 ms
t = 1.0 s
Symbol
V
R
I
F
I
FM(surge)
V
RRM
I
F(AV)
I
FRM
I
FSM
Value
100
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
1
ANODE
1
CASE 318
SOT−23
STYLE 11
CATHODE
2
3
CATHODE/ANODE
MARKING DIAGRAM
A7 MG
G
A7 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR−5 Board (Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−65
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
BAV99LT1G
SBAV99LT1G
BAV99LT3G
SBAV99LT3G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3,000 / Tape & Reel
3,000 / Tape & Reel
10,000 / Tape & Reel
10,000 / Tape & Reel
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
May, 2013
−
Rev. 9
1
Publication Order Number:
BAV99LT1/D
BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G
OFF CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Each Diode)
Characteristic
Reverse Breakdown Voltage,
(I
(BR)
= 100
mA)
Reverse Voltage Leakage Current,
(V
R
= 100 Vdc)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance,
(V
R
= 0, f = 1.0 MHz)
Forward Voltage,
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time,
(I
F
= I
R
= 10 mAdc, i
R(REC)
= 1.0 mAdc) R
L
= 100
W
Forward Recovery Voltage,
(I
F
= 10 mA, t
r
= 20 ns)
Symbol
V
(BR)
I
R
Min
100
−
−
−
−
−
−
−
−
−
−
Max
−
2.5
30
50
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
mAdc
C
D
V
F
pF
mVdc
t
rr
V
FR
ns
V
CURVES APPLICABLE TO EACH DIODE
1000
I
F
, FORWARD CURRENT (mA)
I
R
, REVERSE CURRENT (mA)
100
10
1.0
0.1
0.01
0.001
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
100
T
A
= 125°C
10
T
A
= 85°C
T
A
= 55°C
1
T
A
= 25°C
T
A
= 150°C
T
A
=
−40°C
0.1
T
A
=
−55°C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
F
, FORWARD VOLTAGE (V)
T
A
= 25°C
0
10
20
30
40
50
60
70
V
R
, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
0.61
C
d
, DIODE CAPACITANCE (pF)
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
0
1
2
3
4
5
6
Figure 2. Leakage Current
7
8
V
R
, REVERSE VOLTAGE (V)
Figure 3. Capacitance
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2
BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
E
1
2
HE
c
e
b
q
0.25
A
A1
L
L1
VIEW C
DIM
A
A1
b
c
D
E
e
L
L1
H
E
q
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
°
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
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