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BSO080P03NS3-G

Description
MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3
Categorysemiconductor    Discrete semiconductor   
File Size532KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSO080P03NS3-G Overview

MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3

BSO080P03NS3-G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 30 V
Id - Continuous Drain Current- 14.8 A
Rds On - Drain-Source Resistance8 mOhms
Vgs - Gate-Source Voltage25 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Quad Drain Triple Source
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time19 ns
Height1.75 mm
Length4.9 mm
Moisture SensitiveYes
Pd - Power Dissipation1.6 W
Rise Time47 ns
Factory Pack Quantity2500
Transistor Type1 P-Channel
Typical Turn-Off Delay Time64 ns
Typical Turn-On Delay Time16 ns
Width3.9 mm
Unit Weight0.019048 oz
BSO080P03NS3 G
OptiMOS
3 P3-Power-Transistor
Features
• single P-Channel in SO8
• Qualified according JEDEC for target applications
1)
Product Summary
V
DS
R
DS(on),max
V
GS
=-10 V
V
GS
=-6 V
-30
8.0
11.4
-14.8
A
V
mW
• 150°C operating temperature
V
GS
=25 V, specially suited for notebook applications
• Pb-free plating; RoHS compliant
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
I
D
PG-DSO-8
Type
BSO080P03NS3 G
Package
PG-DSO-8
Marking
080P3NS
Lead free
Yes
Halogen free
Yes
Packing
non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
10 secs
Continuous drain current
1)
I
D
V
GS
=-10 V,
T
A
=25 °C
V
GS
=-10 V,
T
A
=70 °C
V
GS
=-6 V,
T
A
=25 °C
V
GS
=-6 V,
T
A
=70 °C
Unit
steady state
-12
-9.4
-9.8
-7.8
-48
149
±25
mJ
V
1.6
W
°C
A
-14.8
-11.8
-12.4
-9.9
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
T
A
=25 °C
I
D
=-14.8 A,
R
GS
=25
W
T
A
=25 °C
2.5
-55 ... 150
JESD22-A114 HBM
1C (1 kV - 2 kV)
260
55/150/56
°C
Rev. 2.21
page 1
2011-11-02

BSO080P03NS3-G Related Products

BSO080P03NS3-G BSO080P03NS3E-G
Description MOSFET P-Ch -30V -14.8A DSO-8 OptiMOS 3P3 USB Connectors USB Type C Connector Mid Mount
Product Category MOSFET MOSFET
Manufacturer Infineon Infineon
RoHS Details Details
Technology Si Si
Mounting Style SMD/SMT SMD/SMT
Package / Case SO-8 SO-8
Number of Channels 1 Channel 1 Channel
Transistor Polarity P-Channel P-Channel
Vds - Drain-Source Breakdown Voltage - 30 V - 30 V
Id - Continuous Drain Current - 14.8 A - 14.8 A
Rds On - Drain-Source Resistance 8 mOhms 8 mOhms
Vgs - Gate-Source Voltage 25 V 25 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Configuration Single Quad Drain Triple Source Single
Channel Mode Enhancement Enhancement
Fall Time 19 ns 19 ns
Height 1.75 mm 1.75 mm
Length 4.9 mm 4.9 mm
Moisture Sensitive Yes Yes
Pd - Power Dissipation 1.6 W 2.5 W
Rise Time 47 ns 47 ns
Factory Pack Quantity 2500 2500
Transistor Type 1 P-Channel 1 P-Channel
Typical Turn-Off Delay Time 64 ns 64 ns
Typical Turn-On Delay Time 16 ns 16 ns
Width 3.9 mm 3.9 mm
Unit Weight 0.019048 oz 0.019048 oz
Packaging Reel MouseReel
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