BIPOLAR DIGITAL INTEGRATED CIRCUIT
PB1509GV
PB1509GV is a divide by 2, 4, 8 prescaler IC for portable radio or cellular telephone applications.
PB1509GV is
a shrink package version of
PB587G so that this small package contributes to reduce the mounting space.
PB1509GV is manufactured using the high f
T
NESAT
TM
IV silicon bipolar process. This process uses silicon
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
High toggle frequency
: f
in
= 50 MHz to 700 MHz @
2,
50 MHz to 800 MHz @
4,
50 MHz to 1000 MHz @
8
Low current consumption
High-density surface mounting
Supply voltage
Selectable division
: 5.0 mA @ V
CC
= 3.0 V
: V
CC
= 2.2 to 5.5 V
: 8 pin plastic SSOP (175mil)
:
2,
4,
8
APPLICATION
Portable radio systems
Cellular/cordless telephone 2nd Local prescaler and so on.
PART NUMBER
O
PACKAGE
8 pin plastic SSOP
(175 mil) (Pb-Free)
ORDERING INFORMATION
NT
MARKING
1509
SUPPLYING FORM
Embossed tape 8 mm wide. Pin 1 is in tape pull-out
direction. 1000p/reel.
Caution:Electro-static sensitive devices
PB1509GV-E1-A
DI
Document No. P10769EJ2V0DS00 (2nd edition)
Date Published September 1997 N
SC
order:
PB1509GV-A)
Remarks
: To order evaluation samples, please contact your local nearby sales office. (Part number for sample
IN
U
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
ED
1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC
FOR PORTABLE SYSTEMS
μ
PB1509GV
PIN CONNECTION (Top View)
Pin NO.
1
Pin Name
V
CC1
IN
IN
GND
SW1
SW2
OUT
V
CC2
1
2
3
4
8
7
6
5
2
3
4
5
6
7
8
PRODUCT LINE-UP
÷
2
f
in
(MHz)
÷
4
f
in
(MHz)
Product No.
I
CC
(mA)
5.5
5.0
NT
IN
Package
50 to 300
50 to 600
50 to 1000
50 to 700
50 to 800
50 to 1000
V
CC
(V)
÷
8
f
in
(MHz)
μ
PB587 G
μ
PB1509 GV
2.2 to 3.5
2.2 to 5.5
Remarks
This table shows the TYP values of main parameters. Please refer to ELECTRICAL CHARACTERISTICS.
μ
PB587G is discontinued.
INTERNAL BLOCK DIAGRAM
D
Q
D
Q
D
Q
CO
CLK
CLK
IN
Q
IN
CLK
Q
Q
SW1
SW2
DI
S
2
UE
Pin Connection
8 pin SOP (225 mil)
NEC Original
8 pin SSOP (175 mil)
D
OUT
μ
PB1509GV
SYSTEM APPLICATION EXAMPLE
One of the example for usage
RX
DEMO
I
Q
VCO
VCO
SW
÷N
PLL
TX
PA
This block diagram schematically shows the
μ
PB1509GV’s location in one of the example application system. The
other applications are also acceptable for divider use.
DI
S
CO
NT
IN
UE
÷N
0°
φ
90°
D
PLL
μ
PB1509GV
I
Q
3
μ
PB1509GV
Pin Explanations
Applied
Pin No.
1
Symbol
Voltage
V
CC1
2.2 to 5.5
Voltage
⎯
Power supply pin of a input amplifier and dividers. This pin must be
impedance.
2
IN
⎯
⎯
1.7 to 4.95
Pin
Functions and Explanation
Signal input pin. This pin should be coupled to signal source with capacitor
(eg 1000 pF) for DC cut.
3
IN
1.7 to 4.95
⎯
⎯
Signal input bypass pin. This pin must be equipped with bypass capacitor
(eg 1000 pF) to minimize ground impedance.
4
GND
0
Ground pin. Ground pattern on the board should be formed as wide as
possible to minimize ground impedance.
5
SW1
H/L
Divide ratio control pin. Divide ratio can be determined by following applied
level to these pins.
6
SW2
H/L
7
OUT
⎯
8
V
CC2
2.2 to 5.5
DI
S
4
CO
NT
IN
⎯
H
L
SW1
H
L
1/2
1/4
1/4
1/8
impedance.
1.0 to 4.7
DC cut.
⎯
These pins must be each equipped with bypass capacitor to minimize their
Divided frequency output pin. This pin is designed as emitter follower
output. This pin can output 0.1 V
P-P
min with 200
Ω
load.
This pin should be coupled to load device with capacitor (eg 1000 pF) for
Power supply pin of output buffer amplifier. This pin must be equipped with
bypass capacitor (eg 1000 pF) to minimize ground impedance.
UE
SW2
D
equipped with bypass capacitor (eg 1000 pF) to minimize ground
μ
PB1509GV
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage
Input voltage
Total power dissipation
SYMBOL
V
CC
V
in
P
D
T
A
= +25
°C
T
A
= +25
°C,
SW1, SW2 pins
Mounted on double sided copper clad 50
×
50
×
1.6
mm epoxy glass PWB (T
A
= +85
°C)
Operating ambient
temperature
Storage temperature
T
stg
T
A
CONDITION
RATINGS
6.0
6.0
250
UNIT
V
V
mW
°C
UE
−55
to +150
MAX.
5.5
UNIT
V
NOTICE
+85
°C
MIN.
3.5
TYP.
5.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.2
V
CC
OPEN
or
GND
V
CC
OPEN
or
GND
MAX.
5.9
⎯
⎯
⎯
⎯
50
500
−5
0
⎯
V
CC
OPEN
or
GND
V
CC
OPEN
or
GND
500
700
800
⎯
⎯
−20
−20
0.1
V
CC
OPEN
or
GND
@
÷
4
@
÷
8
1000
V
CC
OPEN
or
GND
RECOMMENDED OPERATING CONDITIONS
PARAMETER
Supply voltage
Operating ambient temperature
SYMBOL
V
CC
T
A
MIN.
2.2
−40
TYP.
3.0
+25
ELECTRICAL CHARACTERISTICS (T
A
=
−40
to +85
°C,
V
CC
= 2.2 to 5.5 V)
PARAMETERS
Circuit current
SYMBOLS
NT
IN
TEST CONDITIONS
I
CC
No signals, V
CC
= 3.0 V
f
in(U)1
f
in(U)2
P
in
=
−20
to 0 dBm
P
in
=
−20
to
−5
dBm @
÷
2
f
in(L)1
f
in(L)2
P
in1
P
in2
P
in
=
−20
to 0 dBm
P
in
=
−20
to
−5
dBm
f
in
= 50 MHz to 1000 MHz
f
in
= 50 MHz to 500 MHz
R
L
= 200
Ω
Connection in the test circuit
Connection in the test circuit
V
out
V
IH1
V
IL1
V
IH2
V
IL2
Connection in the test circuit
Connection in the test circuit
Upper Limit Operating Frequency 1
Upper Limit Operating Frequency 2
Lower Limit Operating Frequency 2
Input Power 1
Input Power 2
CO
Lower Limit Operating Frequency 1
Output Voltage
Divide ratio control input high
Divide ratio control input low
DI
S
Divide ratio control input high
Divide ratio control input low
D
−40
to +85
°C
UNIT
mA
MHz
MHz
MHz
MHz
dBm
dBm
V
P-P
⎯
⎯
⎯
⎯
5
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