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BF421

Description
Bipolar Transistors - BJT TRANS GP BULK DLT
CategoryDiscrete semiconductor    The transistor   
File Size47KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BF421 Overview

Bipolar Transistors - BJT TRANS GP BULK DLT

BF421 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Collector-based maximum capacity2.8 pF
Collector-emitter maximum voltage300 V
ConfigurationSingle
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment1.5 W
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.5 V
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BF421; BF423
PNP high voltage transistors
Product specification
Supersedes data of 1996 Dec 09
2004 Nov 10

BF421 Related Products

BF421 BF423112
Description Bipolar Transistors - BJT TRANS GP BULK DLT Bipolar Transistors - BJT TRANS HV BULK DLT PIN
Configuration Single Single

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