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BC547AZL1G

Description
Bipolar Transistors - BJT 100mA 50V NPN
CategoryDiscrete semiconductor    The transistor   
File Size107KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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Bipolar Transistors - BJT 100mA 50V NPN

BC547AZL1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time1 week
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
http://onsemi.com
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC546
BC547
BC548
BC546
BC547
BC548
Symbol
V
CEO
Value
65
45
30
80
50
30
6.0
100
625
5.0
1.5
12
−55
to +150
Unit
Vdc
2
BASE
3
EMITTER
Collector - Base Voltage
V
CBO
Vdc
Emitter - Base Voltage
Collector Current
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 17
12
1
2
3
STRAIGHT LEAD
3
BENT LEAD
TAPE & REEL
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MARKING DIAGRAM
BC
54xy
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
y
A
Y
WW
G
= 6, 7, or 8
= A, B or C
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2012
Rev. 7
1
Publication Order Number:
BC546/D

BC547AZL1G Related Products

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Description Bipolar Transistors - BJT 100mA 50V NPN Bipolar Transistors - BJT 100mA 50V NPN Bipolar Transistors - BJT 100mA 30V NPN
Is it Rohs certified? conform to incompatible incompatible
Maker ON Semiconductor ON Semiconductor ON Semiconductor
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Manufacturer packaging code CASE 29-11 CASE 29-11 CASE 29-11
Reach Compliance Code unknown not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 1 week - 1 week
Other features EUROPEAN PART NUMBER - EUROPEAN PART NUMBER
Maximum collector current (IC) 0.1 A - 0.1 A
Collector-emitter maximum voltage 45 V - 30 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 110 - 200
JEDEC-95 code TO-92 - TO-92
JESD-30 code O-PBCY-T3 - O-PBCY-T3
JESD-609 code e1 - e0
Number of components 1 - 1
Number of terminals 3 - 3
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape ROUND - ROUND
Package form CYLINDRICAL - CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 - 240
Polarity/channel type NPN - NPN
Maximum power dissipation(Abs) 0.625 W - 0.625 W
Certification status Not Qualified - Not Qualified
surface mount NO - NO
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE
Terminal location BOTTOM - BOTTOM
Maximum time at peak reflow temperature 40 - 30
transistor applications AMPLIFIER - AMPLIFIER
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 300 MHz - 300 MHz

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