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AUIRF7805QTR

Description
MOSFET AUTO 30V 1 N-CH HEXFET 11mOhms
CategoryDiscrete semiconductor    The transistor   
File Size293KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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AUIRF7805QTR Overview

MOSFET AUTO 30V 1 N-CH HEXFET 11mOhms

AUIRF7805QTR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionROHS COMPLIANT, SOP-8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Other featuresAVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)13 A
Maximum drain current (ID)13 A
Maximum drain-source on-resistance0.011 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.5 W
Maximum pulsed drain current (IDM)100 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
 
Features
Advanced Planar Technology
Low On-Resistance
Logic Level
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7805Q
 
S
S
S
G
1
2
8
7
A
A
D
D
D
D
V
DSS
R
DS(on)
typ.
max.
I
D
30V
9.2m
11m
13A
3
4
6
5
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
SO-8
AUIRF7805Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7805Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7805QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-Source Voltage
Gate-to-Source Voltage
Parameter
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
A
 
W
W/°C
°C 
Thermal Resistance
 
Symbol
R
JL
R
JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
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