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BC848CDXV6T5G

Description
Bipolar Transistors - BJT 100mA 30V Dual NPN
CategoryDiscrete semiconductor    The transistor   
File Size125KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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BC848CDXV6T5G Overview

Bipolar Transistors - BJT 100mA 30V Dual NPN

BC848CDXV6T5G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerON Semiconductor
package instructionLEAD FREE, PLASTIC, CASE 463A-01, 6 PIN
Contacts6
Manufacturer packaging codeCASE 463A-01
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)420
JESD-30 codeR-PDSO-F6
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC847CDXV6T1G,
SBC847CDXV6T1G,
BC847CDXV6T5G,
BC848CDXV6T1G
Dual General Purpose
Transistors
NPN Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.
Features
(3)
Q
1
http://onsemi.com
(2)
(1)
Q
2
(4)
(5)
BC847CDXV6T1
(6)
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Collector
Emitter Voltage
Collector
Base Voltage
Emitter
Base Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
BC847
45
50
6.0
100
BC848
30
30
5.0
100
Unit
V
V
V
mAdc
6
1
SOT−563
CASE 463A
MARKING DIAGRAMS
1x M
G
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1x
M
G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation, (Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
Junction and Storage
Temperature Range
1. FR−4 @ Minimum Pad
Symbol
P
D
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
= Device Code
x = G or M
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
R
qJA
Symbol
P
D
Max
500
4.0
250
−55
to +150
Unit
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
©
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 4
1
Publication Order Number:
BC847CDXV6T1/D

BC848CDXV6T5G Related Products

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Description Bipolar Transistors - BJT 100mA 30V Dual NPN Bipolar Transistors - BJT 100mA 50V Dual NPN Bipolar Transistors - BJT 100mA 50V Dual NPN Bipolar Transistors - BJT 100mA 30V Dual NPN
Maker ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
package instruction LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN LEAD FREE, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN PLASTIC, CASE 463A-01, 6 PIN
Contacts 6 6 6 6
Manufacturer packaging code CASE 463A-01 463A-01 CASE 463A-01 463A-01
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 45 V 45 V 30 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 420 420 420 420
JESD-30 code R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
JESD-609 code e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1
Number of components 2 2 2 2
Number of terminals 6 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 260 260
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W 0.5 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED 40 40
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
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