BLF2425M6L180P;
BLF2425M6LS180P
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for various applications such as ISM and industrial
heating at frequencies from 2400 MHz to 2500 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
CW
f
(MHz)
2450
I
Dq
(mA)
10
V
DS
(V)
28
P
L(AV)
(W)
180
G
p
(dB)
13.3
D
(%)
53.5
1.2 Features and benefits
Easy power control
Integrated ESD protection
High efficiency
Excellent thermal stability
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.
BLF2425M6L(S)180P
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1]
Simplified outline
Graphic symbol
BLF2425M6L180P (SOT539A)
1
2
5
1
3
3
4
5
4
2
sym117
BLF2425M6LS180P (SOT539B)
1
2
3
4
5
drain1
drain2
gate1
gate2
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF2425M6L180P
-
flanged balanced ceramic package; 2 mounting holes;
4 leads
earless flanged balanced ceramic package; 4 leads
Version
SOT539A
SOT539B
Type number
BLF2425M6LS180P -
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
225
Unit
V
V
C
C
BLF2425M6L180P_25M6LS180P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
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BLF2425M6L(S)180P
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
C;
P
L
= 180 W
Typ
Unit
0.38 K/W
R
th(j-case)
thermal resistance from junction to case
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C per section; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
gate-source threshold voltage
drain leakage current
Conditions
V
GS
= 0 V; I
D
= 1.44 mA
V
DS
= 10 V; I
D
= 144 mA
V
GS
= 0 V
V
DS
= 28 V
V
DS
= 65 V
I
DSX
I
GSS
g
fs
R
DS(on)
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.2 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5 A
-
-
-
-
-
-
-
-
24
-
10
0.1
3
5
-
300
-
-
A
A
A
nA
S
Min
65
1.4
Typ
-
1.8
Max
-
2.4
Unit
V
V
Table 7.
RF characteristics
Test signal: CW; f = 2450 MHz; V
DS
= 28 V; I
Dq
= 10 mA; T
case
= 25
C unless otherwise specified in
a class-AB production test circuit.
Symbol
G
p
D
RL
in
Parameter
power gain
drain efficiency
input return loss
Conditions
P
L
= 180 W
P
L
= 180 W
P
L
= 180 W
Min
11.0
50
-
Typ
13.3
53.5
15
Max
-
-
9
Unit
dB
%
dB
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2425M6L180P and BLF2425M6LS180P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 10 mA; P
L
= 180 W (CW); f = 2450 MHz.
BLF2425M6L180P_25M6LS180P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
3 of 12
BLF2425M6L(S)180P
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data. Typical values per section.
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
2400
2450
2500
Z
S
()
5.9
j8.0
8.4
j7.6
10.6
j5.8
Z
L
()
2.8
j3.1
2.5
j3.1
2.3
j3.0
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
BLF2425M6L180P_25M6LS180P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
4 of 12
BLF2425M6L(S)180P
Power LDMOS transistor
7.3 Test circuit
C14
C6
C8
C5
R1
C2
C10
C12
C1
C7
R2
C4
C3
C9
C11
C13
aaa-002274
Striplines are on a double copper-clad Rogers R04350 Printed-Circuit Board (PCB) with
r
= 3.5
and thickness = 0.508 mm.
See
Table 9
for list of components.
Fig 2.
Component layout for test circuit
Table 9.
List of components
For test circuit, see
Figure 2.
Component
C1, C2, C3
C4, C5, C10, C11
C6, C12, C13
C7
C8, C9
C14
R1, R2
[1]
[2]
[3]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
Value
15 pF
220 nF
4.7
F
39 pF
6.8 pF
220
F,
63 V
6.2
[2]
[3]
[1]
Remarks
SMD 1206
SMD 1206
American technical ceramics type 100A or capacitor of same quality.
American technical ceramics type 800B or capacitor of same quality.
American technical ceramics type 100B or capacitor of same quality.
BLF2425M6L180P_25M6LS180P#4
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 4 — 1 September 2015
5 of 12
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