T1635H Series
Snubberless™ high temperature 16 A Triacs
Main features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT (Q1)
Value
16
600
35
Unit
A
V
mA
A2
G
A1 A2
A1
G
A2
Description
Specifically designed to operate at 150° C, the
new 16 A T1635H Triacs provide an enhanced
performance in terms of power loss and thermal
dissipation. This facilitates the optimization of
heatsink dimensioning, leading to improved space
and cost effectiveness when compared to electro-
mechanical solutions.
Based on ST Snubberless™ technology, the
T1635H series offers high commutation switching
capabilities and high noise immunity levels on the
full range of T
j
.
The T1635H series facilitates the optimization of
the control of universal motors and inductive
loads found in appliances such as vacuum
cleaners, and washing machines.
D
2
PAK
T1635H-G
A2
TO-220AB Insulated
T1635H-I
The T1635H Triacs are also suitable for use in
high temperature environment found in hot
appliances such as cookers, ovens, hobs, electric
heaters, and coffee machines.
O
so
b
te
le
ro
P
uc
d
s)
t(
b
-O
so
P
te
le
od
r
A1
A2
s)
t(
uc
G
TO-220AB
T1635H-T
Order code
Part number
T1635H-600G
T1635H-600G-TR
T1635H-600TRG
T1635H-600IRG
Marking
T1635H-600G
T1635H-600G
T1635H-600T
T1635H-600I
TM: Snubberless is a trademark of STMicroelectronics
August 2006
Rev 1
1/10
www.st.com
Characteristics
T1635H Series
1
Table 1.
Symbol
Characteristics
Absolute maximum ratings
Parameter
D
2
PAK
TO-220AB
TO-220AB Ins
I
TSM
I²t
dI/dt
Non repetitive surge peak on-state current
(full cycle sine wave, T
j
initial = 25° C)
I²t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xI
GT
, tr
≤
100 ns
Non repetitive surge peak off state voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 20 µs
F = 60 Hz
F = 50 Hz
T
c
= 130° C
T
c
= 110° C
t = 16.7 ms
t = 20 ms
tp = 10 ms
F = 120 Hz
T
j
= 150° C
T
j
= 25° C
T
j
= 150° C
T
j
= 150° C
170
A
160
128
50
700
4
1
A
2
s
A/µs
V
A
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
16
A
V
DSM
/V
RSM
I
GM
P
G(AV)
T
stg
T
j
Table 2.
Symbol
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
(dI/dt)c
(2)
Electrical characteristics (T
j
= 25° C, unless otherwise specified)
Test conditions
V
D
= 12 V, R
L
= 33
Ω
V
D
= V
DRM
, R
L
=3.3 kΩ
I
T
= 100 mA
I
G
= 1.2 x I
GT
Quadrant
V
D
= 67% V
DRM
, gate open, T
j
= 150° C
Without snubber, T
j
= 150° C
1. minimum I
GT
is guaranteed at 5% of I
GT
max
2. for both polarities of A2 referenced to A1
bs
O
et
l
o
P
e
ro
uc
d
s)
t(
b
-O
so
te
le
II - III
II - III
II - III
I - III
r
P
MAX
MAX
MIN
MAX
MAX
od
-40 to +150
-40 to +150
s)
t(
uc
35
1.3
0.15
35
50
80
W
°C
Value
Unit
mA
V
V
mA
mA
II
MIN
MIN
300
7.1
V/µs
A/ms
2/10
T1635H Series
Table 3.
Symbol
V
TM (1)
V
TO (1)
R
D (1)
I
DRM
I
RRM
V
DRM
= V
RRM
V
D
/V
R
= 400 V (at peak mains voltage)
1. for both polarities of A2 referenced to A1
Characteristics
Static electrical characteristics
Test conditions
I
TM
= 22.5 A, t
p
= 380 µs
Tj = 25° C
Tj = 150° C
Tj = 150° C
Tj = 25° C
Tj = 150° C
Tj = 150° C
MAX
MAX
MAX
MAX
Value
1.5
0.80
23
5
6.4
mA
4.2
Unit
V
V
mΩ
µA
Table 4.
Symbol
Thermal resistance
Parameter
D
2
PAK
TO-220AB
TO-220AB Ins
S
CU
= 1 cm² D
2
PAK
Value
1.2
Unit
R
th (j-c)
Junction to case (AC)
R
th (j-a)
Junction to ambient
TO-220AB
TO-220AB Ins
Figure 1.
P(W)
18
16
14
12
10
8
6
4
2
0
0
2
α=180
°
Maximum power dissipation
Figure 2.
vs RMS on-state current (full cycle)
O
so
b
te
le
4
6
ro
P
I
T(RMS)
(A)
8
uc
d
10
s)
t(
180°
so
b
-O
I
T(RMS)
(A)
18
16
14
12
10
8
6
4
2
0
α=180
°
te
le
RMS on-state current vs case
temperature (full cycle)
TO-220AB/D²PAK
r
P
od
s)
t(
uc
2.1
45
60
°C/W
TO-220AB
Insulated
T
C
(°C)
25
50
75
100
125
150
12
14
16
0
3/10
Characteristics
T1635H Series
Figure 3.
I
T(RMS)
(A)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
RMS on-state current vs ambient
Figure 4.
temperature, PCB FR4, e
CU
= 35 µm
1.E+00
α=180
°
D²PAK
S
CU
=1 cm²
Relative variation of thermal
impedance vs pulse duration
K=[Z
th
/R
th
]
Z
th(j-c)
1.E-01
Z
th(j-a)
1.E-02
T
amb
(°C)
50
75
100
125
150
1.E-03
1.E-03
1.E-02
1.E-01
t
P
(s)
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5.
Relative variation of gate trigger
current, holding current and
latching current vs junction
temperature (typical values)
Figure 6.
Surge peak on-state current vs
number of cycles
I
GT
, I
H
, I
L
[T
j
] / I
GT
, I
H
, I
L
[T
j
=25°C]
2.5
180
160
I
TSM
(A)
2.0
I
GT
140
120
1.5
I
H
& I
L
100
1.0
0.5
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
Figure 7.
10000
I
TSM
(A), I²t (A²s)
O
bs
100
0.01
l
o
te
e
Figure 8.
Non repetitive surge peak
on-state current (sinusoidal pulse
width tp<10 ms) and corresponding
value of I²t
ro
P
uc
d
s)
t(
120
so
b
-O
80
60
40
20
0
160
Repetitive
T
c
=113 °C
P
te
le
Non repetitive
T
j
initial=25 °C
od
r
s)
t(
uc
t=20ms
One cycle
Number of cycles
10
100
1000
140
1
On-state characteristics (maximum
values)
100
Tj initial=25 °C
I
TM
(A)
dI/dt limitation: 50 A/µs
T
j
=150 °C
T
j
=25 °C
1000
I
TSM
10
t
P
(ms)
0.10
1.00
I²t
T
j
max. :
V
T0
= 0.80 V
R
D
= 23 mW
V
TM
(V)
10.00
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4/10
T1635H Series
Characteristics
Figure 9.
Relative variation of critical rate
Figure 10. Relative variation of critical rate of
of decrease of main current (di/dt)c
decrease of main current (di/dt)c vs
versus junction temperature
reapplied dV/dt (typical values)
2.0
1.8
1.6
(dI/dt)
c
[T
j
] / (dI/dt)
c
[T
j
=150°C]
8
7
6
(dI/dt)
c
[ (dV/dt)
c
] / Specified (dI/dt)
c
1.4
5
4
3
2
1.2
1.0
0.8
0.6
0.4
1
T
j
(°C)
0
25
50
75
100
125
150
0.2
0.0
0.1
1.0
dV/dt (V/µs)
10.0
100.0
Figure 11. Variation of thermal resistance,
junction to ambient versus copper
surface under tab (PCB FR4,
e
CU
35 µm)
R
th(j-a)
(°C/W)
80
D²PAK
Figure 12. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
I
DRM
/I
RRM
(mA)
1.E+01
70
1.E+00
60
50
40
30
20
10
S
CU
(cm²)
0
0
5
10
15
20
Figure 13. Acceptable repetitive peak
off-state voltage versus case-
ambient thermal resistance
R
th(c-a)
(°C/W)
10
9
8
O
7
6
5
4
3
2
1
0
so
b
te
le
ro
P
uc
d
25
30
s)
t(
35
R
th(j-c)
=1.2 °C/W
T
J
=150 °C
so
b
-O
1.E-01
1.E-02
1.E-03
1.E-04
V
DRM
=V
RRM
=200 V
P
te
le
75
od
r
s)
t(
uc
V
DRM
=V
RRM
=600 V
V
DRM
=V
RRM
=400 V
T
j
(°C)
100
125
150
40
50
V
DRM
/V
RRM
(V)
350
400
450
500
550
600
300
5/10
京公网安备 11010802033920号
EEWORLD
