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NTD24N06LT4

Description
MOSFET 24V 60A N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size129KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTD24N06LT4 Overview

MOSFET 24V 60A N-Channel

NTD24N06LT4 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
package instructionCASE 369C-01, DPAK-3
Contacts3
Manufacturer packaging codeCASE 369C-01
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)162 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)24 A
Maximum drain current (ID)24 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.36 W
Maximum pulsed drain current (IDM)72 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn80Pb20)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
NTD24N06L, STD24N06L
Power MOSFET
24 Amps, 60 Volts
Logic Level, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
http://onsemi.com
AEC−Q101 Qualified and PPAP Capable
STD24N06L
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
24 AMPERES, 60 VOLTS
R
DS(on)
= 0.036
W (Typ)
N−Channel
D
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MW)
Gate−to−Source Voltage
Continuous
Non−repetitive (t
p
v10
ms)
Drain Current
Continuous @ T
A
= 25°C
Continuous @ T
A
= 100°C
Single Pulse (t
p
v10
ms)
Symbol
V
DSS
V
DGR
V
GS
V
GS
I
D
I
D
Value
60
60
"15
"20
24
10
72
62.5
0.42
1.88
1.36
−55
to
+175
162
Unit
Vdc
Vdc
Vdc
4
Adc
Apk
W
W/°C
W
W
°C
mJ
1
R
qJC
R
qJA
R
qJA
T
L
2.4
80
110
260
°C/W
2
4
DPAK
CASE 369D
(Straight Lead)
STYLE 2
3
1 2 3
Gate Drain Source
°C
Y
WW
24N6L
G
= Year
= Work Week
= Device Code
= Pb−Free Package
1 2
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
24
N6LG
4
Drain
YWW
24
N6LG
3
I
DM
P
D
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
Starting T
J
= 25°C
(V
DD
= 50 Vdc, V
GS
= 5.0 Vdc,
L = 1.0 mH, I
L
(pk) = 18 A, V
DS
= 60 Vdc)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
2
1
3
Drain
Gate
Source
T
J
, T
stg
E
AS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended pad
size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
Rev. 3
1
Publication Order Number:
NTD24N06L/D

NTD24N06LT4 Related Products

NTD24N06LT4 NTD24N06L-1G
Description MOSFET 24V 60A N-Channel MOSFET 24V 60A N-Channel
Is it Rohs certified? incompatible conform to
Maker ON Semiconductor ON Semiconductor
package instruction CASE 369C-01, DPAK-3 LEAD FREE, CASE 369D-01, DPAK-3
Contacts 3 3
Manufacturer packaging code CASE 369C-01 CASE 369D-01
Reach Compliance Code not_compliant not_compliant
Factory Lead Time 1 week 1 week
Other features LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 162 mJ 162 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 24 A 24 A
Maximum drain current (ID) 24 A 24 A
Maximum drain-source on-resistance 0.045 Ω 0.045 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSSO-G2
JESD-609 code e0 e3
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 240 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 1.36 W 1.36 W
Maximum pulsed drain current (IDM) 72 A 72 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin/Lead (Sn80Pb20) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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