TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices
2N3762
2N3762L
2N3763
2N3763L
2N3764
2N3765
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N3762*
2N3764
40
40
5.0
1.5
2N3763*
2N3765
60
60
Unit
Vdc
Vdc
Vdc
Adc
TO-39* (TO-205AD)
2N3762, 2N3763
2N3762*
1
2N3763*
Total Power Dissipation @ T
A
= +25
0
C
Operating & Storage Junction Temp. Range
P
T
T
op
,
T
stg
Symbol
1.0
2N3764
2
2N3765
0.5
W
0
-55 to +200
Max.
C
THERMAL CHARACTERISTICS
Characteristics
TO-5*
2N3762L, 2N3763L
Unit
2N3762*
2N3763*
2N3764
2N3765
TO-46* (TO-206AB)
2N3764, 2N3765
*See appendix A for
package outline
0
Thermal Resistance Junction-to-Case
60
88
C/W
R
θ
JC
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly at 2.86 mW/
0
C for T
A
> +25
0
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 20 Vdc
V
CB
= 30 Vdc
V
CB
= 40 Vdc
V
CB
= 60 Vdc
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
V
(BR)
CEO
40
60
100
100
10
10
Vdc
I
CBO
ηAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3762, L, 2N3763, L, 2N3764, 2N3765 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Collector-Emitter Cutoff Current
V
EB
= 2.0 Vdc, V
CE
= 20 Vdc
V
EB
= 2.0 Vdc, V
CE
= 30 Vdc
Emitter-Base Cutoff Current
V
EB
= 2.0 Vdc
V
EB
= 5.0 Vdc
Symbol
2N3762, 2N3764
2N3763, 2N3765
All Types
2N3762, 2N3764
2N3763, 2N3765
I
CEX
Min.
Max.
100
100
200
10
10
Unit
ηAdc
I
EBO
ηAdc
µAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 1.0 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
I
C
= 500 mAdc, V
CE
= 1.0 Vdc
I
C
= 1.0 Adc, V
CE
= 1.5 Vdc
I
C
= 1.5 Adc, V
CE
= 5.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 150 m Adc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.0 Adc, I
B
= 100 mAdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 150 m Adc, I
B
= 15 mAdc
I
C
= 500 mAdc, I
B
= 50 mAdc
I
C
= 1.0 Adc, I
B
= 100 mAdc
35
40
40
30
20
30
20
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
h
FE
140
120
80
V
CE(sat)
0.1
0.22
0.5
0.9
0.8
1.0
1.2
1.4
Vdc
V
BE(sat)
0.9
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 50 mAdc, V
CE
= 10 Vdc, f = 100 MHz
2N3762, 2N3764
2N3763, 2N3765
h
fe
C
obo
C
ibo
t
1.8
1.5
6.0
6.0
25
80
8.0
35
80
35
pF
pF
ηs
ηs
ηs
ηs
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
V
CC
= 30 Vdc, V
EB
= 0,
Rise Time
I
C
= 1.0 mAdc, I
B1
= 100 mAdc
Storage Time
V
CC
= 30 Vdc, V
EB
= 0,
Fall Time
I
C
= 1.0 mAdc, I
B1
= 100 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
d
r
t
s
t
f
t
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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