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APTDF200H60G

Description
Discrete Semiconductor Modules Power Module - Diode
CategoryDiscrete semiconductor    diode   
File Size462KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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APTDF200H60G Overview

Discrete Semiconductor Modules Power Module - Diode

APTDF200H60G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeMODULE
package instructionR-XUFM-X4
Contacts4
Reach Compliance Codecompliant
Is SamacsysN
Other featuresLOW NOISE
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)2 V
JESD-30 codeR-XUFM-X4
JESD-609 codee1
Humidity sensitivity level1
Maximum non-repetitive peak forward current1500 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature175 °C
Minimum operating temperature-40 °C
Maximum output current270 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
APTDF200H60G
Diode Full Bridge
Power Module
+
AC1
AC2
V
RRM
= 600V
I
C
= 200A @ Tc = 80°C
Application
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Features
Benefits
Outstanding performance at high frequency
operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Ultra fast recovery times
Soft recovery characteristics
High blocking voltage
High current
Low leakage current
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
-
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
Symbol
V
R
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward
Current
Duty cycle = 50%
T
C
= 25°C
T
C
= 80°C
T
C
= 45°C
T
C
= 45°C
Max ratings
600
270
200
270
1500
A
Unit
V
APTDF200H60G – Rev 2 October, 2012
RMS Forward Current
Duty cycle = 50%
Non-Repetitive Forward Surge Current
8.3ms
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5

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