VS-T..RIA Series
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Vishay Semiconductors
Medium Power Phase Control Thyristors
(Power Modules), 50 A, 70 A, 90 A
FEATURES
• Electrically isolated base plate
• Types up to 1200 V
RRM
• 3500 V
RMS
isolating voltage
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL E78996 approved
D-55
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D-55
Single SCR
50 A, 70 A, 90 A
100 V, 1200 V
1.55 V
120 mA
-40 °C to +125 °C
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Type
DESCRIPTION
These series of T-modules are intended for general purpose
applications such as battery chargers, welders and plating
equipment, regulated power supplies and temperature and
speed control circuits. The semiconductors are electrically
isolated from the metal base, allowing common heatsinks
and compact assemblies to be built.
Modules - Thyristor, Standard
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
RRM
T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
CHARACTERISTICS
70 °C
T50RIA
50
80
1310
1370
8550
7800
85 500
100 to 1200
T70RIA
70
110
1660
1740
13 860
12 650
138 500
100 to 1200
-40 to +125
T90RIA
90
141
1780
1870
15 900
14 500
159 100
100 to 1200
UNITS
A
A
A
A
2
s
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
VS-T50RIA
VS-T70RIA
VS-T90RIA
40
60
80
100
120
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE PEAK REVERSE
AND PEAK OFF-STATE VOLTAGE
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM
I
/I
MAXIMUM
NON-REPETITIVE PEAK REVERSE
RRM DRM
AT T
J
= 25 °C
VOLTAGE
μA
V
150
300
500
700
900
1100
1300
100
Revision: 20-Dec-16
Document Number: 93756
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-T..RIA Series
www.vishay.com
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current at
case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
t = 10 ms
Maximum peak, one-cycle on-state,
non-repetitive surge current
t = 8.3 ms
I
TSM
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope
resistance
High level value of on-state slope
resistance
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
V
FM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
70
80
1310
1370
1100
Sine half wave,
initial
T
J
= T
J
maximum
1150
8550
7800
6050
5520
70
110
1660
1740
1400
1460
13 860
12 650
9800
8950
70
141
1780
1870
A
1500
1570
15 900
14 500
11 250
10 270
A
2
s
V
1.13
4.1
3.3
1.60
1.60
200
400
0.88
3.6
3.2
1.55
1.55
200
400
0.88
2.9
m
(I >
x I
T(AV)
), T
J
maximum
I
TM
=
x I
T(AV)
, T
J
= 25 °C, t
p
= 400 μs square
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
I
TM
=
x I
T(AV)
, T
J
= 25 °C, t
p
= 400 μs square
Average power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
Anode supply = 6 V, initial I
T
= 30 A, T
J
= 25 °C
Anode supply = 6 V, resistive load = 10
Gate pulse: 10 V, 100 μs, T
J
= 25 °C
2.6
1.55
1.55
200
mA
400
V
V
A
2
s
°C
A
T50RIA T70RIA T90RIA UNITS
50
70
90
A
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
(I >
x I
T(AV)
), T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
maximum
85 500 138 500 159 100
0.97
0.77
0.78
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gd
t
rr
t
q
TEST CONDITIONS
T
J
= 25 °C, V
d
= 50 % V
DRM
, I
TM
= 50 A
I
g
= 500 mA, t
r
0.5, t
p
6 μs
T
J
= 125 °C, I
TM
= 50 A, t
p
= 300 μs, dI/dt = 10 A/μs
T
J
= T
J
maximum, I
TM
= 50 A, t
p
= 300 μs, dI/dt = 15 A/μs,
V
R
= 100 V, linear to 80 % V
DRM
VALUES
0.9
3
110
μs
UNITS
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current
RMS isolation voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
ISOL
dV/dt
T
J
= T
J
maximum
50 Hz, circuit to base, all terminals shorted, T
J
= 25 °C, t = 1 s
T
J
= T
J
maximum, linear to 80 % rated V
DRM (1)
TEST CONDITIONS
VALUES
15
3500
500
UNITS
mA
V
V/μs
Note
(1)
Available with dV/dt = 1000 V/μs, to complete code add S90 i.e. T90RIA80S90
Revision: 20-Dec-16
Document Number: 93756
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T..RIA Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate voltage to
trigger
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GT
V
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz
T
J
= T
J
maximum, t
p
5 ms
T
J
= -40 °C
T
J
= 25 °C
T
J
= T
J
maximum
Maximum required DC gate current to
trigger
Maximum gate voltage that will not
trigger
Maximum gate current that will not
trigger
Maximum rate of rise of turned-on
current
T
J
= -40 °C
I
GT
T
J
= 25 °C
T
J
= T
J
maximum
V
GD
T
J
= T
J
maximum, rated V
DRM
applied
I
GD
V
D
= 0.67 rated V
DRM
, I
TM
= 2 x rated dI/dt
I
g
= 400 mA for T50RIA and I
g
= 500 mA for
T70RIA/T90RIA; t
r
< 0.5 μs, t
p
6 μs
For repetitive value use 40 % non-repetitive
Per JEDEC STD. RS397, 5.2.2.6
5.0
200
180
160
150
6.0
200
180
160
150
6.0
200
180
160
150
A/μs
mA
Anode supply = 6 V,
resistive load;
Ra = 1
T50RIA T70RIA T90RIA UNITS
10
2.5
2.5
10
4.0
2.5
1.5
250
100
50
0.2
12
3
3
10
4.0
2.5
1.5
270
120
60
0.2
12
3
3
10
4.0
2.5
1.5
270
120
60
0.2
V
mA
V
W
A
V
dI/dt
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
to heatsink
terminals
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated
threads
M3.5 mounting screws
(1)
M5 screw terminals
0.65
TEST CONDITIONS
T50RIA T70RIA T90RIA UNITS
-40 to +125
°C
-40 to +150
0.50
0.2
1.3 ± 10 %
3 ± 10 %
54
D-55 (T-module)
Nm
g
0.38
K/W
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound
R
CONDUCTION PER JUNCTION
DEVICES
T50RIA
T70RIA
T90RIA
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
180°
0.08
0.07
0.05
120°
0.10
0.08
0.06
90°
0.13
0.10
0.08
60°
0.19
0.14
0.12
30°
0.31
0.24
0.20
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
180°
0.06
0.05
0.04
120°
0.10
0.08
0.06
90°
0.14
0.11
0.09
60°
0.20
0.15
0.12
30°
0.32
0.24
0.20
K/W
UNITS
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 20-Dec-16
Document Number: 93756
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-T..RIA Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
80
70
60°
60
50
0
10
20
30
40
50
60
70
80
Average On-state Current (A)
30°
90°
120°
180°
DC
Conduction Period
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
80
70
60
50
0
10
T50RIA.. Series
R
thJC
(DC) = 0.65 K/W
T50RIA.. Series
R
thJC
(DC) = 0.65 K/W
Conduction Angle
30°
60°
90°
120°
180°
20
30
40
50
60
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
80
K/W
0.3
K/W
0.5
70
60
50
180°
120°
90°
60°
30°
RMS Limit
R
th
0.
7
K/
W
SA
K/W
.1
=0
1
K/
W
1.5
K/W
2K
/W
a
elt
-D
R
40
30
Conduction Angle
3K
/W
5 K/W
20
10
0
0
10
20
30
40
T50RIA.. Series
T
J
= 125°C
10 K/W
0
50
20
40
60
80
100
120
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
110
100
90
80
70
60
50 RMS Limit
40
30
20
10
0
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Conduction Period
DC
180°
120°
90°
60°
30°
R
th
/W
3K
0.
SA
K/
W
0.7
K/
W
1K
/W
0.
5
W
K/
.1
=0
ta
el
-D
R
1.5
K/W
2K
/W
3 K/
W
T50RIA.. Series
T
J
= 125°C
5 K/W
Fig. 4 - On-State Power Loss Characteristics
Revision: 20-Dec-16
Document Number: 93756
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-T..RIA Series
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Vishay Semiconductors
1300
Peak Half Sine Wave On-state Current (A)
1200
1100
1000
900
800
700
600
T50RIA.. Series
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
1200
Peak Half Sine Wave On-state Current (A)
1100
1000
900
800
700
600
500
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
T50RIA.. Series
10
100
500
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
100
T
J
= 25°C
10
T
J
= 125°C
T50RIA.. Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30ohms;
tr=0.5µs, tp>=6µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65ohms
10
tr=1µs, tp>=6µs
(b)
Tj=-40 °C
Tj=25 °C
(1) PGM = 10W, tp = 5ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 50W, tp = 1ms
(4) PGM = 100W, tp = 500µs
(a)
Tj=125 °C
1
(1) (2)
(3) (4)
VGD
IGD
0.1
0.001
0.01
0.1
T50RIA.. Series
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Revision: 20-Dec-16
Document Number: 93756
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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