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MJE13003G

Description
Bipolar Transistors - BJT BIP NPN 2A 400V
CategoryDiscrete semiconductor    The transistor   
File Size105KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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MJE13003G Overview

Bipolar Transistors - BJT BIP NPN 2A 400V

MJE13003G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
Parts packaging codeTO-225
package instructionLEAD FREE, CASE 77-09, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys DescriptionBipolar Transistors - BJT BIP NPN 2A 400V
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
Minimum DC current gain (hFE)5
JEDEC-95 codeTO-225
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
MJE13003
SWITCHMODEt Series NPN
Silicon Power Transistor
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
http://onsemi.com
Reverse Biased SOA with Inductive Loads @ T
C
= 100_C
Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C
t
c
@ 1 A, 100_C is 290 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Symbol
V
CEO(sus)
V
CEV
I
C
V
EBO
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
Value
400
700
9
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
1.5 AMPERES
NPN SILICON POWER
TRANSISTORS
300 AND 400 VOLTS
40 WATTS
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− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
Emitter Current
− Continuous
− Peak (Note 1)
Total Power Dissipation @ T
A
= 25_C
Derate above 25_C
W
mW/_C
W
mW/_C
_C
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to
+150
TO−225
CASE 77
STYLE 3
3
2 1
MARKING DIAGRAM
1 BASE
2 COLLECTOR
3 EMITTER
YWW
JE
13003G
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
R
qJA
T
L
Max
Unit
Thermal Resistance, Junction−to−Case
3.12
89
_C/W
_C/W
_C
Thermal Resistance, Junction−to−Ambient
Maximum Load Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
275
Y
WW
JE13003
G
= Year
= Work Week
= Device Code
= Pb−Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
ORDERING INFORMATION
Device
MJE13003
MJE13003G
Package
TO−225
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 2
Publication Order Number:
MJE13003/D
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