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SI4925BDY-T1-GE3

Description
Fixed Inductors 1616 1uH 140mOhms +/-20%Tol 1.2A HiCur
CategoryDiscrete semiconductor    The transistor   
File Size184KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SI4925BDY-T1-GE3 Overview

Fixed Inductors 1616 1uH 140mOhms +/-20%Tol 1.2A HiCur

SI4925BDY-T1-GE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)5.3 A
Maximum drain current (ID)5.3 A
Maximum drain-source on-resistance0.025 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfacePURE MATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 30
R
DS(on)
(Ω)
0.025 at V
GS
= - 10 V
0.041 at V
GS
= - 4.5 V
I
D
(A)
- 7.1
- 5.5
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches
- Notebook PCs
- Desktop PCs
- Game Stations
SO-8
S
1
S
1
G
1
S
2
G
2
1
2
3
4
Top View
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
S
2
Ordering Information:
Si4925BDY-T1-E3
(Lead (Pb)-free)
Si4925BDY-T1-GE3
(Lead (Pb)-free and Halogen-free)
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.7
2.0
1.3
- 55 to 150
- 7.1
- 5.7
- 40
- 0.9
1.1
0.7
W
°C
10 s
- 30
± 20
- 5.3
- 4.3
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
50
85
30
Maximum
62.5
110
40
°C/W
Unit
Document Number: 72001
S09-0869-Rev. D, 18-May-09
www.vishay.com
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