(normally-off) transistor that utilizes a vertical DMOS
structure and a well-proven silicon gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal
runaway and thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance
and fast switching speeds are desired.
Applications
•
•
•
•
•
•
•
Logic-level Interfaces (Ideal for TTL and CMOS)
Solid State Relays
Battery-operated Systems
Photo-voltaic Drives
Analog Switches
General Purpose Line Drivers
Telecommunication Switches
Package Types
3-lead SOT-23 (TO-236AB)
(Top view)
3-lead TO-92
(Top view)
3-lead SOT-89 (243AA)
(Top view)
DRAIN
DRAIN
SOURCE
GATE
DRAIN
SOURCE
GATE
SOURCE
DRAIN
GATE
See
Table 2-1, Table 2-2
and
Table 2-3
for pin information.
2017 Microchip Technology Inc.
DS20005709A-page 1
TN5325
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-source Voltage ....................................................................................................................................... BV
DSX
Drain-to-gate Voltage .......................................................................................................................................... BV
DGX
Gate-to-source Voltage ......................................................................................................................................... ±20V
Operating Ambient Temperature, T
A
................................................................................................... –55°C to +150°C
Storage Temperature, T
S
..................................................................................................................... –55°C to +150°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
1
Electrical Specifications:
Unless otherwise specified, for all specifications T
A
= T
J
= +25°C.
Parameter
Drain-to-source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Sym.
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Min. Typ. Max.
250
0.6
—
—
—
Zero-gate Voltage Drain Current
—
—
On-state Drain Current
Static Drain-to-source On-state
Resistance
Change in R
DS(ON)
with Temperature
Note 1:
2:
I
D(ON)
R
DS(ON)
∆
RDS(ON)
0.6
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
–4.5
100
1
10
1
—
—
8
7
1
Unit
V
V
nA
µA
mA
A
Ω
%/°C
Conditions
V
GS
= 0V, I
D
= 100 µA
V
GS
= V
DS
, I
D
= 1 mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 100V
V
GS
= 0V, V
DS
= Maximum Rating
V
DS
= 0.8 Maximum Rating,
V
GS
= 0V, T
A
= 125°C (Note
2)
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 150 mA
V
GS
= 10V, I
D
= 1A
V
GS
= 4.5V, I
D
= 150 mA (Note
2)
mV/°C V
GS
= V
DS
, I
D
= 1 mA (Note
2)
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty
cycle.
Specification is obtained by characterization and is not 100% tested.
DS20005709A-page 2
2017 Microchip Technology Inc.
TN5325
AC ELECTRICAL CHARACTERISTICS
2
Electrical Specifications:
Unless otherwise specified, for all specifications T
A
= T
J
= +25°C.
Parameter
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
DIODE PARAMETER
Diode Forward Voltage Drop
Reverse Recovery Time
Note 1:
2:
V
SD
t
rr
—
—
—
300
1.8
—
V
ns
V
GS
= 0V, I
SD
= 200 mA (Note
1)
V
GS
= 0V, I
SD
= 200 mA (Note
2)
Sym.
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
Min. Typ. Max.
150
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
110
60
23
20
15
25
25
ns
pF
Unit
V
GS
= 0V,
V
DS
= 25V,
f = 1 MHz
V
DD
= 25V,
I
D
= 150 mA,
R
GEN
= 25Ω
Conditions
mmho V
DS
= 25V, I
D
= 200 mA
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty
cycle.
Specification is obtained by characterization and is not 100% tested.
TEMPERATURE SPECIFICATIONS
Parameter
TEMPERATURE RANGE
Operating Ambient Temperature
Storage Temperature
PACKAGE THERMAL RESISTANCE
3-lead SOT-23
3-lead TO-92
3-lead SOT-89
Note 1:
JA
JC
JA
JC
JA
JC
—
—
—
—
—
—
350
200
170
125
78
15
—
—
—
—
—
—
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Note 1
T
A
T
S
–55
–55
—
—
+150
+150
°C
°C
Sym.
Min. Typ. Max.
Unit
Conditions
Mounted on FR5 25 mm x 25 mm x 1.57 mm
THERMAL CHARACTERISTICS
Package
3-lead SOT-23
3-lead TO-92
3-lead SOT-89
Note 1:
2:
I
D (
1)
(Continuous)
(mA)
150
215
316
I
D
(Pulsed)
(A)
0.4
0.8
1.5
Power Dissipation at
T
A
= 25°C
(W)
0.36
0.74
1.6
(
2)
I
DR (
1)
(mA)
150
215
316
I
DRM
(A)
0.4
0.8
1.5
I
D
(continuous) is limited by maximum T
J
.
Mounted on FR5 board, 25 mm x 25 mm x 1.57 mm
2017 Microchip Technology Inc.
DS20005709A-page 3
TN5325
2.0
PIN DESCRIPTION
Table 2-1, Table 2-2
and
Table 2-3
show the
description of pins in TN5325 3-lead SOT-23, 3-lead
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