GR1A THRU GR1M
SURFACE MOUNT FAST SWITCHING RECTIFIER
Reverse Voltage -
50 to 1000 Volts
Forward Current -
1.0 Ampere
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief, ideal for automated placement
Fast switching for high efficiency
Glass passivated chip junction
High temperature soldering:
250 /10 seconds at terminals
Mechanical Data
Case:
SMA molded plastic over passivated chip
Terminals:
Solder plated, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Weight:
0.004 ounce, 0.118 gram
D IM E N S IO N S
D IM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
in c h e s
M in .
0 .2 1 6
0 .1 7 6
0 .0 9 4
0 .1 7 0
0 .0 3 9
0 .0 8 0
0 .0 6 8
0 .1 1 2
0 .0 5 7
-
0 .0 1 6
0 .1 0 9
0 .1 0 5
0 .0 7 8
M a x .
0 .2 2 6
0 .1 8 2
0 .1 0 0
0 .1 7 6
0 .0 5 5
0 .0 8 1
0 .0 8 3
0 .1 1 8
-
0 .0 1 8
-
0 .1 1 5
0 .1 0 7
0 .0 8 1
M in .
5 .4 8
4 .4 8
2 .4 0
4 .3 3
1 .0 0
2 .0 3
1 .7 2
2 .8 5
1 .4 4
-
0 .4 0
2 .7 7
2 .6 7
2 .0 0
m m
M a x .
5 .7 4
4 .6 3
2 .5 5
4 .4 8
1 .4 0
2 .0 7
2 .1 0
3 .0 0
-
0 .4 5
-
2 .9 3
2 .7 3
2 .0 5
N o te
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
GR1A
GR1B
GR1D
GR1G
GR1J
GR1K
GR1M
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
=90
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method) T
L
=90
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=125
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
R
JA
JL
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30.0
1.30
5.0
50.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amp
Amps
Volts
A
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Maximum thermal resistance (Note 3)
Operating junction and storage temperature range
150
10.0
105.0
32.0
-55 to +150
250
500
7.0
nS
F
/W
T
J
, T
STG
Notes:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2x0.2 (5.0x5.0mm) copper pad areas
1
Embedded System
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