BLF888D; BLF888DS
UHF power LDMOS transistor
Rev. 4 — 18 February 2016
Product data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The
excellent ruggedness of this device makes it ideal for digital and analog transmitter
applications.
Table 1.
Application information
RF performance at V
DS
= 50 V in an ultra wide Doherty application.
Test signal
DVB-T (8k OFDM)
[1]
[2]
[3]
f
(MHz)
470 to 860
P
L(AV)
(W)
115 to 134
[1]
G
p
(dB)
17
D
(%)
40 to 48
[1]
IMD
shldr
(dBc)
38
to
44
[2]
PAR
(dB)
8
[3]
Depending on selected channel.
Depending on exciter used.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness (VSWR
40 : 1 through all phases)
Excellent thermal stability
Integrated ESD protection
One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
Internal input matching for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting
BLF888D; BLF888DS
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1 (peak)
drain2 (main)
gate1 (peak)
gate2 (main)
source
[1]
Simplified outline
Graphic symbol
BLF888D (SOT539A)
1
2
5
1
3
3
4
5
4
2
sym117
BLF888DS (SOT539B)
1
2
3
4
5
drain1 (peak)
drain2 (main)
gate1 (peak)
gate2 (main)
source
[1]
1
2
5
1
3
4
3
5
4
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF888D
BLF888DS
-
-
earless flanged balanced ceramic package; 4 leads
Version
SOT539B
Type number Package
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
104
+11
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLF888D_BLF888DS
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 18 February 2016
2 of 12
BLF888D; BLF888DS
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
[1]
Symbol Parameter
Typ Unit
0.27 K/W
0.16 K/W
thermal resistance from junction T
case
= 75
C;
V
DS
= 50 V;
to case
I
DS
= 2.7 A (main); I
DS
= 0 A (peak)
T
case
= 90
C;
V
DS
= 50 V;
P
L
= 115 W; PAR = 8 dB
[2]
[1]
[2]
Measured under DC test conditions, with peak section off.
Measured in an ultra wide Doherty application, using a DVB-T (8k OFDM) signal, PAR (of output signal) at
0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
Conditions
V
DS
= 10 V; I
D
= 240 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
Min
104
1.4
-
-
-
-
Typ
-
1.9
37
-
120
Max
-
2.4
-
280
-
Unit
V
V
A
A
nA
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.4 mA
0.061 2.8
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 8.5 A
Table 7.
AC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
C
iss
C
oss
C
rss
input capacitance
output capacitance
Conditions
Min Typ
210
70
1.3
Max Unit
-
-
-
pF
pF
pF
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
reverse transfer capacitance V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
Table 8.
RF characteristics
V
DS
= 50 V; I
Dq
= 1.3 A; T
case
= 25
C unless otherwise specified; in a class-AB production test
circuit.
Symbol Parameter
Test signal: 2-tone CW
P
L(AV)
G
p
D
IMD3
average output power
power gain
drain efficiency
third-order intermodulation
distortion
output power at 3 dB gain
compression
f
1
= 860 MHz; f
2
= 860.1 MHz
f
1
= 860 MHz; f
2
= 860.1 MHz
f
1
= 860 MHz; f
2
= 860.1 MHz
f
1
= 860 MHz; f
2
= 860.1 MHz
-
19
43
-
250
21
45
32
-
-
-
29
W
dB
%
dBc
Conditions
Min Typ
Max Unit
Test signal: pulsed CW
P
L(3dB)
f = 860 MHz; t
p
= 100
s;
= 10 %
540
580
-
W
BLF888D_BLF888DS
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 18 February 2016
3 of 12
BLF888D; BLF888DS
UHF power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLF888D and BLF888DS are capable of withstanding a load mismatch
corresponding to VSWR
40 : 1 through all phases under the following conditions:
V
DS
= 50 V; f = 810 MHz at rated load power.
7.2 Test circuit
60 mm
60 mm
33 mm
4.6 mm
C20
R5
C36
R3
C16
C22
C18
C10
C14
C30
C31
C2 C3
C1
C4
C5
C6
C7
C8
C11
C19
C37
C23
R6
C17
T1
C21
R2
C12
C9
C13
C15
R1
T2
60 mm
C34 C32
C33
C35
R4
7 mm
11.2 mm
18.7 mm
32 mm
aaa-012723
Printed-Circuit Board (PCB): RF-35;
r
= 3.5 F/m; thickness = 0.765 mm;
thickness copper plating = 35
m,
gold plated.
See
Table 9
for a list of components.
Fig 1.
Component layout for production RF test circuit
Table 9.
List of components
For test circuit see
Figure 1.
Component
C1
C7
C8
C9, C12, C13
C10, C11
C14, C15
C16, C17
C18, C19
C20, C21
BLF888D_BLF888DS
Description
Value
[1]
[1]
[2]
[2]
[1]
[1]
Remarks
multilayer ceramic chip capacitor 12 pF
multilayer ceramic chip capacitor 6.8 pF
multilayer ceramic chip capacitor 4.7 pF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 4.7
F,
50 V
multilayer ceramic chip capacitor 3.6 pF
multilayer ceramic chip capacitor 4.7
F,
50 V
electrolytic capacitor
470
F,
63 V
C2, C3, C4, C5, C6 multilayer ceramic chip capacitor 8.2 pF
[2]
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 18 February 2016
4 of 12
BLF888D; BLF888DS
UHF power LDMOS transistor
Table 9.
List of components
…continued
For test circuit see
Figure 1.
Component
C22, C23
C30
C31
C32
C33, C34, C35
C36, C37
R1, R2
R3, R4
R5, R6
R3, R4
T1, T2
[1]
[2]
[3]
Description
Value
[2]
[3]
[3]
[3]
[3]
Remarks
multilayer ceramic chip capacitor 47 pF
multilayer ceramic chip capacitor 15 pF
multilayer ceramic chip capacitor 5.6 pF
multilayer ceramic chip capacitor 2.7 pF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 470
F,
50 V
resistor
resistor
resistor
resistor
semi rigid coax
10
5.6
100
510
25
,
length = 160 mm
SMD 1206
SMD 1206
Micro-Coax
UT-090C-25
American Technical Ceramics type 180R or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 100A or capacitor of same quality.
7.3 Graphical data
7.3.1 1-Tone CW pulsed
aaa-012473
aaa-012474
(1)
(2)
(3)
(4)
23
G
p
(dB)
22
60
η
D
(%)
50
40
21
30
20
20
19
(3)
(1)
(2)
(4)
10
18
0
100
200
300
400
500
600 700
P
L
(W)
800
0
0
100
200
300
400
500
600 700
P
L
(W)
800
I
Dq
= 2
650 mA; t
p
= 100
s;
= 10 %.
(1) V
DS
= 40 V
(2) V
DS
= 45 V
(3) V
DS
= 50 V
(4) V
DS
= 55 V
I
Dq
= 2
650 mA; t
p
= 100
s;
= 10 %.
(1) V
DS
= 40 V
(2) V
DS
= 45 V
(3) V
DS
= 50 V
(4) V
DS
= 55 V
Fig 2.
Power gain as a function of output power;
typical values
Fig 3.
Drain efficiency as a function of output power;
typical values
BLF888D_BLF888DS
All information provided in this document is subject to legal disclaimers.
© Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet
Rev. 4 — 18 February 2016
5 of 12
DSP and ARM Processors
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