Smart Power High-Side-Switch
One Channel: 20 mΩ
BTS441TG
1
•
Overview
N channel vertical power FET with charge pump, ground referenced
CMOS compatible input, monolithically integrated in Smart SIPMOS
technology
Providing embedded protective functions
Green Product (RoHS compliant)
AEC Qualified
PG-TO263-5
General Description
•
•
•
Application
•
•
•
•
µC compatible power switch 5 V, 12 V and 24 V DC applications
All types of resistive, inductive and capatitive loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
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•
•
•
•
Very low standby current
Optimized static electromagnetic compatibility (EMC)
µC and CMOS compatible
Fast demagnetization of inductive loads
Stable behavior at undervoltage
Protection Functions
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•
•
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Short circuit protection
Current limitation
Overload protection
Thermal Shutdown
Overvoltage protection (including load dump) with
external GND resistor
Reverse battery protection with external GND-resistor
Loss of ground and loss of
V
bb
protection
Electrostatic discharge (ESD) protection
2
IN
GND
BTS441TG
3
V
BB
Control
Circuit
R
IN
Temperature
Sensor
5
OUT
Type
BTS441TG
Data sheet
Package
PG-TO263-5
2
Marking
BTS441T
Rev. 1.21, 2012-12-06
BTS441TG
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Data sheet
4
Rev. 1.21, 2012-12-06
BTS441TG
Maximum Ratings
at T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
Load dump protection
1)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
2)
= 2
Ω,
R
L
= 0,5
Ω,
t
d
= 200 ms, IN= low or high
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC) ; TC≤25°C
Maximal switchable inductance, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
(see diagram, p.8)
I
L(ISO)
= 21 A, RL= 0
Ω:
E
4)
AS
=0.7J:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
Out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Symbol
V
bb
V
bb
V
Load dump3)
I
L
T
j
T
stg
P
tot
Z
L
V
ESD
Values
43
34
60
self-limited
-40 ...+150
-55 ...+150
125
2.1
1.0
8.0
-10 ... +16
±2.0
≤
1
≤
75
≤
33
Unit
V
V
V
A
°C
W
mH
kV
Input voltage (DC)
Current through input pin (DC)
see internal circuit diagrams page 7
V
IN
I
IN
R
thJC
R
thJA
V
mA
K/W
Thermal resistance
chip - case:
junction - ambient (free air):
SMD version, device on pcb
5)
:
1)
2)
3)
4)
5)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a 150
Ω
resistor in the GND connection. A resistor for the protection of the input is integrated.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
E
AS
is the maximum inductive switch off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70μm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Data sheet
5
Rev. 1.21, 2012-12-06
Microchip MCU
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