G R 3A TH R U G R 3M
S U R FA C E M O U N T G L A S S PA S S IVAT E D J U N C T IO N
FA S T S W IT C H IN G R E C T IF IE R
R e v e rs e Vo lta g e -
50 to 1000 Volts
F o rw a rd C u rre n t -
3.0 A m peres
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
Low profile package
Built-in strain relief, ideal for automated placement
Fast switching for high efficiency
Easy pick and place
Glass passivated chip junction
High temperature soldering:
250 /10 seconds at terminals
Mechanical Data
Case:
SMC molded plastic body over passivated chip
Terminals:
Solder plated, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.007 ounce, 0.25 gram
D IM E N S IO N S
D IM
A
B
C
D
H
J
K
P
S
in c h e s
M in .
0 .2 6 0
0 .2 2 0
0 .0 7 5
0 .1 1 5
0 .0 0 2 0
0 .0 0 6
0 .0 3 0
M a x.
0 .2 8 0
0 .2 4 0
0 .0 9 5
0 .1 2 1
0 .0 0 6 0
0 .0 1 2
0 .0 5 0
M in .
6 .6 0
5 .5 9
1 .9 0
2 .9 2
0 .0 5 1
0 .1 5
0 .7 6
m m
M a x.
7 .1 1
6 .1 0
2 .4 1
3 .0 7
0 .1 5 2
0 .3 0
1 .2 7
N o te
0 .0 2 0 R E F
0 .3 0 5
0 .3 2 0
0 .5 1 R E F
7 .7 5
8 .1 3
Maximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
GR3A
GR3B
GR3D
GR3G
GR3J
GR3K
GR3M
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
=75
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 method) T
L
=75
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=125
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
R
JA
JL
50
35
50
100
70
100
200
140
200
400
280
400
3.0
100.0
1.30
10.0
250.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
Volts
A
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
150
60.0
15.0
50.0
-55 to +150
250
500
nS
F
/W
T
J
, T
STG
Notes:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3X0.3 (8.0X8.0mm) copper pad areas
1
Microchip MCU
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