SEMICONDUCTOR
TECHNICAL DATA
DC/DC CONVERTER APPLICATIONS.
FEATURES
Composite type with a PNP transistor and a Schottky barrier diode
contained in one package facilitating high-density mounting.
The KTX511T consists of two chips which are equivalent to the
KTX511T
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
E
K
1
B
K
6
Ultrasmall-sized package permiting applied sets to be made small
and slim (mounting height 0.7 ).
A
F
KTA1532T and the KDR701S, respectively.
2
5
DIM
A
B
C
D
E
D
F
G
H
I
J
K
L
3
4
MILLIMETERS
_
2.9 + 0.2
1.6+0.2/-0.1
_
0.70 + 0.05
_
0.4 + 0.1
2.8+0.2/-0.3
_
1.9 + 0.2
0.95
_
0.16 + 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
EQUIVALENT CIRCUIT (TOP VIEW)
C
J
I
6
5
4
Marking
6
5
4
L
G
G
J
H
Lot No.
Q1
D1
Type Name
DA
1
2
3
1. Q
1
EMITTER
2. Q
1
BASE
3. D
1
ANODE
4. Q
1
, D
1
COMMON (COLLECTOR, CATHODE)
5. Q
1
, D
1
COMMON (COLLECTOR, CATHODE)
6. Q
1
, D
1
COMMON (COLLECTOR, CATHODE)
1
2
3
TS6
MAXIMUM RATING (Ta=25
Transistor Q
1
)
SYMBOL
V
CBO
V
CEO
V
EBO
DC
Pulse
I
C
I
CP
I
B
P
C
*
T
j
T
stg
0.8
)
RATING
-20
-20
-5
-1.5
-3
-300
0.9
150
-55
150
UNIT
V
V
V
A
A
mA
W
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
Diode (SBD) D
1
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge Current
Junction Temperature
Storage Temperature Range
SYMBOL
V
RRM
V
R
I
O
I
FSM
T
j
T
stg
RATING
30
30
0.7
5
125
-55
150
UNIT
V
V
A
A
2002. 1. 24
Revision No : 1
1/5
KTX511T
ELECTRICAL CHARACTERISTICS (Ta=25 )
Transistor Q
1
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Collector Output Capacitance
Turn-On Time
Swiitching
Time
SYMBOL
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
t
on
INPUT
TEST CONDITION
V
CB
=-12V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-10 A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10 A, I
C
=0
I
C
=-750mA, I
B
=-15mA
I
C
=-1.5A, I
B
=-30mA
I
C
=-750mA, I
B
=-15mA
V
CE
=-2V, I
C
=-100mA
V
CE
=-2V, I
C
=-300mA
V
CB
=-10V, f=1MHz
PW=20µs
DC
<
1%
=
I
B1
I
B2
R
B
50Ω
V
R
220µF
470µF
V
CC
=-5V
R
L
MIN.
-
-
20
20
-5
-
-
-
200
-
-
-
TYP.
-
-
-
-
-
-120
-210
-0.85
-
210
30
50
MAX.
-0.1
-0.1
-
-
-
-180
-320
-1.2
560
-
-
-
UNIT
A
A
V
V
V
mV
mV
V
MHz
pF
OUTPUT
Storage Time
t
stg
-
90
-
nS
Fall Time
t
f
V
BE
=5V
-20I
B1
=20I
B2
=I
C
=-750mA
-
15
-
Diode (SBD) D
1
CHARACTERISTIC
Reverse Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recover Time
SYMBOL
V
R
V
F
I
R
C
T
t
rr
I
R
=1mA
I
F
=0.7A
V
R
=30V
V
R
=0V, f=1MHz
I
F
=I
R
=100mA
-
-
190
7.5
TEST CONDITION
MIN.
30
-
TYP.
-
-
MAX.
-
0.55
80
-
-
UNIT
V
V
A
pF
ns
2002. 1. 24
Revision No : 1
2/5
KTX511T
Q
1
(PNP TRANSISTOR)
I
C
- V
CE
mA
h
FE
- I
C
-20mA
-2.0
COLLECTOR CURRENT I
C
(A)
-50m
mA
1K
DC CURRENT GAIN h
FE
500
300
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-30
-40
-1.8
V =-2V
CE
A
-10mA
-8mA
-6mA
-4mA
-2mA
I
B
=0mA
Ta=7
Ta=2
Ta=-2
5 C
5 C
5 C
100
50
30
-0.01
-0.03
-0.1
-0.3
-1
-3
-0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(mV)
-500
-300
I
C
/I
B
=20
V
CE(sat)
- I
C
-1K
-500
-300
I
C
/I
B
=50
-100
-50
-30
5
=7
Ta
C
-100
-50
-30
Ta=
C
75
C
25
Ta= 5 C
-2
Ta=
C C
5
=-2 a=25
Ta T
-10
-5
-0.01
-0.03
-0.1
-0.3
-1
-3
-10
-0.01
-0.03
-0.1
-0.3
-1
-3
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
V
BE(sat)
- I
C
-10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
-5
-3
COLLECTOR CURRENT I
C
(A)
I
C
/I
B
=50
I
C
- V
BE
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
V
CE
=-2V
C
Ta=25
C
Ta=-25
C
Ta=75
-1
-0.5
-0.3
Ta=-25 C
Ta=75 C
Ta=25 C
-0.1
-0.01
-0.03
-0.1
-0.3
-1
-3
COLLECTOR CURRENT I
C
(A)
BASE-EMITTER VOLTAGE V
BE
(V)
2002. 1. 24
Revision No : 1
3/5
KTX511T
f
T
- I
C
COLLECTOR OUTPUT CAPACITANCE
C
ob
(pF)
TRANSITION FREQUENCY f
T
(MHz)
1K
500
300
V
CE
=-2V
C
ob
- V
CB
100
50
30
f=1MHz
100
50
30
-0.01
-0.03
-0.1
-0.3
-1
-3
10
5
3
-1
-3
-5
-10
-30
COLLECTOR-BASE VOLTAGE V
CB
(V)
COLLECTOR CURRENT I
C
(A)
SAFE OPERATING AREA
-5
-3
COLLECTOR CURRENT I
C
(A)
-1
-0.5
-0.3
COLLECTOR POWER DISSIPATION
P
C
(W)
I
C
MAX.(PULSED)
10
Pc - Ta
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
MOUNTED ON A
CERAMIC BOARD
(600mm
2
0.8mm)
S
0
µ
I
C
MAX
(CONTINUOUS)
DC
50
*
10
OP
1m
m
S*
S*
0
µ
S*
10
ER
AT
IO
0m
S*
N
-0.1
-0.05
-0.03
-0.01
-0.1
* SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
(600mm
2
0.8mm)
-0.3
-1
-3
-10
-30
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
D
1
(SBD)
I
R
- V
R
50
REVERSE CURRENT I
R
(µA)
30
FORWARD CURRENT I
F
(mA)
Ta=25 C
I
F
- V
F
10
10
10
1
0.1
0.01
0.001
3
Ta=25 C
2
10
5
3
1
0
5
10
15
20
25
30
REVERSE VOLTAGE V
R
(V)
0
100
200
300
400
500
FORWARD VOLTAGE V
F
(V)
2002. 1. 24
Revision No : 1
4/5
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