GS71024T/U
TQFP, FP-BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 8, 9, 10, 12, 15 ns
• CMOS low power operation: 190/170/160/130/110 mA at
minimum cycle time.
• Single 3.3 V ± 0.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: –40 to 85°C
• Package
T: 100-pin TQFP package
U: 6 mm x 8 mm Fine Pitch Ball Grid Array
GT: Pb-Free 100-pin TQFP available
64K x 24
1.5Mb Asynchronous SRAM
1
A
B
C
D
E
F
G
H
2
3
4
8, 9, 10, 12, 15 ns
3.3 V V
DD
Center V
DD
and V
SS
Fine Pitch BGA Bump Configuration
5
6
DQ
DQ
DQ
V
SS
V
DD
DQ
DQ
DQ
A
3
DQ
DQ
DQ
DQ
DQ
DQ
A
15
A
2
CE2
CE1
A
5
A
7
A
9
A
11
A
14
A
1
WE
OE
A
4
A
6
A
8
A
10
A
13
A
0
DQ
DQ
DQ
DQ
DQ
DQ
A
12
DQ
DQ
DQ
V
DD
V
SS
DQ
DQ
DQ
Description
The GS71024 is a high speed CMOS static RAM organized as
65,536 words by 24 bits. Static design eliminates the need for
external clocks or timing strobes. The GS71024 operates on a
single 3.3 V power supply, and all inputs and outputs are TTL-
compatible. The GS71024 is available in a 6 mm x 8 mm Fine
Pitch BGA package, as well as in a 100-pin TQFP package.
6 mm x 8 mm, 0.75 mm Bump Pitch
Top View
Pin Descriptions
Symbol
A
0
to A
15
X/Y
WE
CE1, CE2
V
DD
Description
Address input
Vector Input
Write enable input
Chip enable input
+3.3 V power supply
Symbol
DQ
1
to DQ
24
V/S
OE
—
V
SS
Description
Data input/output
Address Multiplexer Control
Output enable input
—
Ground
Block Diagram
A0
Row
Decoder
Address
Input
A14
A15
X/Y
V/S
CE1
CE2
WE
OE
Memory Array
1024 x 1536
0
1
Q
Column
Decoder
Control
I/O Buffer
DQ1
DQ24
Rev: 1.05 11/2004
1/13
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71024T/U
100-Pin TQFP Pinout
A
A
CE1
CE2
NC
NC
NC
X/Y
V/S
NC
NC
NC
NC
NC
DQ
DQ
DQ
DQ
V
SS
V
DD
DQ
DQ
NC
V
DD
NC
V
SS
DQ
DQ
V
DD
V
SS
DQ
DQ
DQ
DQ
NC
NC
NC
NC
NC
V
DD
V
SS
NC
WE
NC
OE
NC
NC
NC
A
0
A
1
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
Top View
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
NC
NC
NC
NC
DQ
DQ
DQ
DQ
V
SS
V
DD
DQ
DQ
V
SS
NC
V
DD
NC
DQ
DQ
V
DD
V
SS
DQ
DQ
DQ
DQ
NC
NC
NC
NC
NC
NC
A
A
A
A
A
A
NC
NC
V
SS
V
DD
Rev: 1.05 11/2004
2/13
NC
NC
A
A
A
A
A
A
NC
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71024T/U
Truth Table
CE1
H
X
L
L
L
L
L
X: “H” or “L”
CE2
X
L
H
H
H
H
H
OE
X
X
L
L
X
X
H
WE
X
X
H
H
L
L
H
V/S
X
X
H
L
H
L
X
Mode
Not selected
Not selected
Read using X/Y
Read using A15
Write using X/Y
Write using A15
Output disable
DQ0 to DQ23
High Z
High Z
Data Out
Data Out
Data In
Data In
High Z
I
DD
V
DD
Current
ISB1, ISB2
Absolute Maximum Ratings
Parameter
Supply Voltage
Input Voltage
Output Voltage
Allowable TQFP power dissipation
Allowable FPBGA power dissipation
Storage temperature
Symbol
V
DD
V
IN
V
OUT
PD
PD
T
STG
Rating
–0.5 to +4.6
–0.5 to V
DD
+ 0.5
(≤ 4.6 V max.)
–0.5 to V
DD
+ 0.5
(≤ 4.6 V max.)
1
1
–55 to 150
Unit
V
V
V
W
W
o
C
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.05 11/2004
3/13
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71024T/U
Recommended Operating Conditions
Parameter
Supply Voltage for -10/12/15
Supply Voltage for -8
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
V
DD
V
DD
V
IH
V
IL
T
Ac
T
Ai
Minimum
3.0
3.135
2.0
–0.3
0
–40
Typical
3.3
3.3
—
—
—
—
Maximum
3.6
3.6
V
DD
+ 0.3
0.8
70
85
Unit
V
V
V
V
o
C
o
C
Notes:
1. Input overshoot voltage should be less than V
DD
+ 2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Input Capacitance
I/O Capacitance
Symbol
C
IN
C
OUT
Test Condition
V
IN
= 0 V
V
OUT
= 0 V
Maximum
5
7
Unit
pF
pF
Notes:
1. Tested at T
A
= 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested
DC I/O Pin Characteristics
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
IL
I
OL
V
OH
V
OL
Test Conditions
V
IN
= 0 to V
DD
Output High Z, V
OUT
= 0
to V
DD
I
OH
= –4mA
I
OL
= +4mA
Minimum
–1uA
–1uA
2.4
—
Maximum
1uA
1uA
—
0.4 V
Rev: 1.05 11/2004
4/13
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71024T/U
AC Test Conditions
Parameter
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
Conditions
V
IH
= 2.4 V
V
IL
= 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Output Load 1
DQ
50Ω
VT = 1.4 V
30pF
1
Output Load 2
3.3 V
DQ
5pF
1
589Ω
434Ω
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in
Fig. 1
unless otherwise noted
3. Output load 2 for t
LZ
, t
HZ
, t
OLZ
and t
OHZ
.
Power Supply Currents
Parameter
Symbol
Test Conditions
CE
≤
V
IL
All other inputs
≥
V
IH
or
≤
V
IL
Min. cycle time
I
OUT
= 0 mA
CE
≥
V
IH
All other inputs
≥
V
IH
or
≤V
IL
Min. cycle time
CE
≥
V
DD
– 0.2 V
All other inputs
≥
V
DD
– 0.2 V or
≤
0.2 V
0 to 70°C
8 ns
9 ns
10 ns
12 ns
15 ns
10 ns
-40 to 85°C
12 ns
15 ns
Operating
Supply
Current
I
DD
190 mA
170 mA
160 mA
130 mA
110 mA
165 mA
135 mA
115 mA
Standby
Current
I
SB1
45 mA
45 mA
40 mA
35 mA
30 mA
45 mA
40 mA
35 mA
Standby
Current
I
SB2
10 mA
15 mA
Rev: 1.05 11/2004
5/13
© 1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
京公网安备 11010802033920号
EEWORLD
