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RN1610

Description
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
CategoryDiscrete semiconductor    The transistor   
File Size166KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RN1610 Overview

TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)

RN1610 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSUPER MINI, SM6, 2-3N1A, 6 PIN
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILIT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.3 V
RN1610,RN1611
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
RN1610,RN1611
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l
Including two devices in SM6 (super mini type with 6 leads)
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Complementary to RN2610, RN2611
Unit: mm
Equivalent Circuit
Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
°
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
5
100
300
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
2-3N1A
*
Total rating
Equivalent Circuit
(Top View)
1
2001-06-07

RN1610 Related Products

RN1610 RN1611
Description TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker Toshiba Semiconductor Toshiba Semiconductor
package instruction SUPER MINI, SM6, 2-3N1A, 6 PIN SUPER MINI, SM6, 2-3N1A, 6 PIN
Contacts 6 6
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features BUILIT-IN BIAS RESISTOR BUILIT-IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A
Collector-based maximum capacity 6 pF 6 pF
Collector-emitter maximum voltage 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 120 120
JESD-30 code R-PDSO-G6 R-PDSO-G6
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz
VCEsat-Max 0.3 V 0.3 V
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