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RN5006

Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
CategoryDiscrete semiconductor    The transistor   
File Size79KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

RN5006 Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN5006 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Parts packaging codeSC-62
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR
Shell connectionCOLLECTOR
Maximum collector current (IC)2 A
Collector-emitter maximum voltage10 V
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1 W
Maximum power dissipation(Abs)0.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)140 MHz
VCEsat-Max0.5 V
RN5006
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN5006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l
With built-in bias resistors
l
Simplify circuit design
l
Reduce a quantity of parts and manufacturing process
l
Small flat package
l
P
C
= 1~2W (mounted on ceramic substrate)
l
Complementary to RN6006
Unit: mm
Equivalent Circuit
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05g (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse (Note1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
*
T
j
T
stg
Rating
10
10
6
2
4
0.4
500
1000
150
−55~150
Unit
V
V
V
A
A
mW
mW
°C
°C
Marking
<
Note:
Pulse width
=
10ms, duty cycle
<
30 %
=
*
: Mounterd on ceramic substrate (250mm
2
× 0.8t)
1
2001-10-29

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