HZS-L Series
Silicon Epitaxial Planar Zener Diode for
Low Noise Application
REJ03G0166-0200Z
(Previous: ADE-208-121A)
Rev.2.00
Jan.06.2004
Features
•
Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series.
•
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
•
Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.
•
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-L Series
Mark
Type No.
Package Code
MHD
Pin Arrangement
B
7
2
1
2
Type No.
Cathode band
1. Cathode
2. Anode
Rev.2.00, Jan.06.2003, page 1 of 6
HZS-L Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Junction temperature
Storage temperature
Symbol
Pd
Tj
Tstg
Value
400
200
–55 to +175
Unit
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage
V
Z
(V)*
Type
HZS6L
Grade
A1
A2
A3
B1
B2
B3
C1
C2
C3
HZS7L
A1
A2
A3
B1
B2
B3
C1
C2
C3
Note:
Min
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.5
1
Reverse Current
Test
Condition
I
R
(µA)
Max
1
Test
Condition
V
R
(V)
2.0
Dynamic Resistance
r
d
(Ω)
Max
150
Test
Condition
I
Z
(mA)
0.5
Max
5.5
5.6
5.7
5.8
5.9
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.6
7.7
7.9
I
Z
(mA)
0.5
80
0.5
60
0.5
0.5
1
3.5
60
0.5
1. Tested with DC.
Rev.2.00, Jan.06.2003, page 2 of 6
HZS-L Series
Zener Voltage
V
Z
(V)*
Type
HZS9L
Grade
A1
A2
A3
B1
B2
B3
C1
C2
C3
HZS11L
A1
A2
A3
B1
B2
B3
C1
C2
C3
HZS12L
A1
A2
A3
B1
B2
B3
C1
C2
C3
HZS15L
1
2
3
HZS16L
1
2
3
Note:
Min
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
12.4
12.6
12.9
13.2
13.5
13.8
14.1
14.5
14.9
15.3
15.7
16.3
1
Reverse Current
Test
Condition
I
R
(µA)
Max
1
Test
Condition
V
R
(V)
6.0
Dynamic Resistance
r
d
(Ω)
Max
60
Test
Condition
I
Z
(mA)
0.5
Max
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.9
13.1
13.4
13.7
14.0
14.3
14.7
15.1
15.5
15.9
16.5
17.1
I
Z
(mA)
0.5
0.5
1
8.0
80
0.5
0.5
1
10.5
80
0.5
0.5
1
13.0
80
0.5
0.5
1
14.0
80
0.5
1. Tested with DC.
Rev.2.00, Jan.06.2003, page 3 of 6
HZS-L Series
Zener Voltage
V
Z
(V)*
Type
HZS18L
Grade
1
2
3
HZS20L
1
2
3
HZS22L
1
2
3
HZS24L
1
2
3
HZS27L
1
2
3
HZS30L
1
2
3
HZS33L
1
2
3
HZS36L
1
2
3
Min
16.9
17.5
18.1
18.8
19.5
20.2
20.9
21.6
22.3
22.9
23.6
24.3
25.2
26.2
27.2
28.2
29.2
30.2
31.2
32.2
33.2
34.2
35.3
36.4
1
Reverse Current
Test
Condition
I
R
(µA)
Max
1
Test
Condition
V
R
(V)
15.0
Dynamic Resistance
r
d
(Ω)
Max
80
Test
Condition
I
Z
(mA)
0.5
Max
17.7
18.3
19.0
19.7
20.4
21.1
21.9
22.6
23.3
24.0
24.7
25.5
26.6
27.6
28.6
29.6
30.6
31.6
32.6
33.6
34.6
35.7
36.8
38.0
I
Z
(mA)
0.5
0.5
1
18.0
100
0.5
0.5
1
20.0
100
0.5
0.5
1
22.0
120
0.5
0.5
1
24.0
150
0.5
0.5
1
27.0
200
0.5
0.5
1
30.0
250
0.5
0.5
1
33.0
300
0.5
Notes: 1. Tested with DC.
2. Type No. is as follows; HZS6A1L, HZS6A2L, HZS36-3L
Rev.2.00, Jan.06.2003, page 4 of 6
HZS-L Series
Main Characteristic
10
–2
HZS12B2L
HZS20-2L
10
–3
Zener Current I
Z
(A)
HZS16-2L
HZS24-2L
HZS6B2L
HZS9B2L
HZS30-2L
10
–4
10
–5
10
–6
10
–7
10
–8
0
5
10
15
20
25
30
35
HZS36-2L
40
Zener Voltage V
Z
(V)
Fig.1 Zener current vs. Zener voltage
Zener Voltage Temperature Coefficient
γ
Z
(mV/°C)
Zener Voltage Temperature Coefficient
γ
Z
(%/°C)
0.10
0.08
0.06
0.04
mV/°C
0.02
0
−0.02
−0.04
−0.06
−0.08
−0.10
0
5
%/°C
50
40
30
20
10
0
−10
−20
−30
−40
−50
10 15 20 25 30 35 40
Zener Voltage V
Z
(V)
500
l
2.5 mm
3 mm
Power Dissipation Pd (mW)
400
Printed circuit board
100
×
180
×
1.6t mm
Quality: paper phenol
300
l
=
5 mm
200
l
=
10 mm
(Publication value)
100
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Fig.3 Power Dissipation vs. Ambient Temperature
Fig.2 Temperature Coefficient vs. Zener voltage
Rev.2.00, Jan.06.2003, page 5 of 6
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