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BUK9875-100A

Description
TrenchMOS logic level FET
CategoryDiscrete semiconductor    The transistor   
File Size109KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BUK9875-100A Overview

TrenchMOS logic level FET

BUK9875-100A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
ConfigurationSingle
Maximum drain current (Abs) (ID)7 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)8 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
BUK9875-100A
TrenchMOS™ logic level FET
Rev. 01 — 30 January 2001
Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™
1
technology, featuring very low on-state resistance.
Product availability:
BUK9875-100A in SOT223 (SC-73).
2. Features
s
s
s
s
TrenchMOS™ technology
Q101 compliant
150
°C
rated
Logic level compatible.
3. Applications
s
Automotive and general purpose power switching:
x
12 V, 24 V and 42 V loads
x
Motors, lamps and solenoids.
c
c
4. Pinning information
Table 1:
Pin
1
2
3
4
Pinning - SOT223 (SC-73), simplified outline and symbol
Description
gate (g)
4
Simplified outline
Symbol
drain (d)
source (s)
drain (d)
1
Top view
d
g
2
3
MSB002 - 1
MBB076
s
SOT223 (SC-73)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
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