Surface Mount Dual PNP
Transistor
2N5796U (TX, TXV)
Features:
Ceramic 6 pin surface mount package
Small package to minimize circuit board area
Hermetically sealed
Electrical performance similar to dual 2N2907A
Processed per MIL-PRF-19500/496
Description:
The 2N5796U (TX, TXV) are herme cally sealed, ceramic surface mount devices, consis ng of two individual silicon PNP
transistors. The six pin ceramic package is ideal for designs where board space and device weight are important design
considera ons.
Typical screening and lot acceptance tests are per MIL‐PRF‐19500/496. The burn‐in condi on is V
CB
= 30 V, P
D
= 300 mW
each transistor, T
A
= 25°C. Refer to MIL‐PRF‐19500/496 for complete requirements.
When ordering parts without processing, do not use the TX or TXV suffix.
Applications:
General switching
Amplification
Signal processing
Radio transmission
Logic gates
Pin #
3
4
5
LED
Base
Collector
Emi er
Pin #
2
1
6
Transistor
Base
Collector
Emi er
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue C
08/2016
Page 1
Surface Mount Dual PNP
Transistor
2N5796U (TX, TXV)
Electrical Specifications
Absolute Maximum Ratings
(T
A
= 25° C unless otherwise noted)
Collector‐Emi er Voltage
Collector‐Base Voltage
Emi er‐Base Voltage
Collector Current‐Con nuous
Opera ng Junc on Temperature (T
J
)
Storage Junc on Temperature (T
stg
)
Power Dissipa on @ T
A
= 25°C
Power Dissipa on @ Tc = 25° C
Soldering Temperature (vapor phase reflow for 30 seconds)
Soldering Temperature (heated collet for 5 seconds)
60 V
60 V
5 V
600 mA
‐65° C to +200 °C
‐65° C to +200° C
0.5 W
0.6 W
(1)
215° C
260° C
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO1
I
CBO2
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
h
FE7
Forward‐Current Transfer Ra o
Collector‐Base Breakdown Voltage
Collector‐Emi er Breakdown Voltage
Emi er‐Base Breakdown Voltage
Collector‐Base Cutoff Current
Collector‐Base Cutoff Current
Emi er‐Base Cutoff Current
75
60
5
75
100
100
100
50
50
40
10
10
100
V
V
nA
µA
nA
‐
‐
‐
‐
‐
‐
‐
I
C
= 10 µA
I
C
= 10 mA
(1)
I
E
= 10 µA
V
CB
= 50 V
V
BC
= 50 V, T
A
= 150°C
V
EB
= 3 V
V
CE
= 10 V, I
C
= 100 µA
V
CE
= 10 V, I
C
= 1.0 mA
V
CE
= 10 V, I
C
= 10 mA
(1)
V
CE
= 10 V, I
C
= 150 mA
(1)
V
CE
= 10 V, I
C
= 300 mA
(1)
V
CE
= 1.0 V, I
C
= 150 mA
(1)
V
CE
= 10 V, I
C
= 150 mA, T
A
= ‐55° C
(1)
300
Note:
1. Pulsed Test: Pulse Width = 300 µs ± 50, 1‐2 % Duty Cycle
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue C
08/2016
Page 2
Surface Mount Dual PNP
Transistor
2N5796U (TX, TXV)
Electrical Characteristics
(T
A
= 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
Off Characteris cs con nued
V
CE(SAT)1
Collector‐Emi er Satura on Voltage
V
CE(SAT)2
Collector‐Emi er Satura on Voltage
V
BE(SAT)1
Base‐Emi er Satura on Voltage
V
BE(SAT)1
Base‐Emi er Satura on Voltage
h
fe
C
obo
C
ibo
t
on
t
off
Magnitude of Small‐Signal Short‐Circuit
Forward Current Transfer Ra o
Open Circuit Output Capacitance
Input Capacitance (output open)
Turn‐on Time
Turn‐off Time
2
0.4
1.6
1.3
2.6
10
8
25
50
140
V
V
V
V
pF
pF
ns
ns
I
C
= 150 mA, I
B
= 15 mA
(1)
I
C
= 500 mA, I
B
= 50 mA
(1)
I
C
= 150 mA, I
B
= 15 mA
(1)
I
C
= 500 mA, I
B
= 50 mA
(1)
V
CE
= 20 V, I
C
= 20 mA, f = 100 MHZ
V
CB
= 10 V, I
E
= 0, 100 kHZ ≤ f ≤ 1 MHz
V
EB
= 2.0 V, I
E
= 0, 100 kHZ ≤ f ≤ 1 MHz
V
CC
= 30 V, I
C
= 150 mA, I
B1
= 15 mA,
PW = 200 ns
V
CC
= 30 V, I
C
= 150 mA, I
B1
= I
B2
= 15 mA,
PW = 200 ns
Standard Packaging:
Waffle Pack
Note:
1. Pulsed Test: Pulse Width = 300 µs ± 50, 1‐2 % Duty Cycle
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue C
08/2016
Page 3
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