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FDMC15N06 — N-Channel UltraFET Power MOSFET
May 2014
FDMC15N06
N-Channel UltraFET Power MOSFET
55 V, 15 A, 90 mΩ
Features
• R
DS(on)
= 75 mΩ
(Typ.)
@ V
GS
= 10 V, I
D
= 15 A
• 100% Avalanche Tested
• RoHS compliant
Description
These N-Channel power MOSFETs are manufactured using the
innovative UItraFET process. This advanced process technol-
ogy achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance.This device is capable of
withstanding high energy in the avalanche mode and the diode
exhibits very low reverse recovery time and stored charge. It
was designed for use in applications where power efficiency is
important, such as switching regulators, switching converters,
motor drivers, relay drivers, lowvoltage bus switches, and power
management in portable and battery-operated products.
Bottom
Pin 1
S
S
S
G
D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
Top
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
- Continuous (T
C
=
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
(T
C
=
(T
A
=
25
o
C)
25
o
C)
- Continuous (T
C
=
25
o
C)
100
o
C)
(Note 1a)
(Note 2)
(Note 3)
Parameter
FDMC15N06
55
±20
15
9
2.4
60
36
15
3.5
35
2.3
-55 to +150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W
o
C
o
C
- Continuous (T
A
= 25
o
C)
- Pulsed
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
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