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BF998R215

Description
RF MOSFET Transistors TAPE7 MOS-RFSS
Categorysemiconductor    Discrete semiconductor   
File Size120KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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RF MOSFET Transistors TAPE7 MOS-RFSS

BF998R215 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current30 A
Vds - Drain-Source Breakdown Voltage12 V
TechnologySi
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-143R
PackagingReel
PackagingMouseReel
PackagingCut Tape
Channel ModeDepletion
ConfigurationSingle Dual Gate
Height1 mm
Length3 mm
Pd - Power Dissipation200 mW
Factory Pack Quantity3000
TypeRF Small Signal MOSFET
Vgs - Gate-Source Voltage+/- 6 V
Width1.4 mm
Unit Weight0.000321 oz
DISCRETE SEMICONDUCTORS
DATA SHEET
BF998; BF998R
Silicon N-channel dual-gate
MOS-FETs
Product specification
Supersedes data of April 1991
1996 Aug 01
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