CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□RB1WGUT series
No.11020ECT03
●Description
The BH□□RB1WGUT series is a line of 150 mA output CMOS regulators that deliver a highly stable precision (± 1%) output
voltage. Proprietary ROHM technology enables a small load regulation of 2 mV and a dropout voltage of 100 mV.
At just 1.0 mm
1.04 mm, the new VCSP60N1 package is extremely compact, and the IC's enhanced protection circuits
contribute to improved end products characteristics.
●Features
1) High accuracy output voltage: ± 1%
2) Dropout voltage: 100 mV (at 100 mA)
3) Stable with ceramic capacitors
4) Low bias current: 34
μA
5) High ripple rejection ratio: 63 dB (Typ., 1 kHz)
6) Output voltage on/off control
7) Built-in overcurrent and thermal shutdown circuits
8) VCSP60N1 WL-CSP package : (1.0×1.04×0.6mm)
●Applications
Battery-driven portable devices, etc.
●Product
line
150
mA BH□□RB1WGUT Series
Product name
BH□□RB1WGUT
1.5
√
1.8
√
2.5
√
2.8
√
2.9
√
3.0
√
3.1
√
3.3
√
Package
VCSP60N1
Model name: BH□□RB1W□
a
b
Symbol
Description
Output voltage specification
□□
15
a
18
25
28
b
Output voltage (V)
1.5 V (Typ.)
1.8 V (Typ.)
2.5 V (Typ.)
2.8 V (Typ.)
□□
29
30
31
33
Output voltage (V)
2.9 V (Typ.)
3.0 V (Typ.)
3.1 V (Typ.)
3.3 V (Typ.)
Package GUT: VCSP60N1
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© 2011 ROHM Co., Ltd. All rights reserved.
1/8
2011.01 - Rev.C
BH□□RB1WGUT series
●Absolute
maximum ratings
Parameter
Applied supply voltage
Power dissipation
Operating temperature range
Storage temperature range
Symbol
VMAX
Pd
Topr
Tstg
Ratings
-0.3 to +6.5
530
*1
-40 to +85
-55 to +125
Unit
V
mW
°C
°C
Technical Note
*1: Reduce by 5.3 mW/C over 25C, when mounted on a glass epoxy PCB (7 mm
7 mm
0.8 mm).
●Recommended
operating ranges (not to exceed Pd)
Parameter
Power supply voltage
Output current
●Recommended
operating conditions
Parameter
Input capacitor
Output capacitor
Symbol
C
IN
C
O
Ratings
Min.
0.7
*2
0.7
*2
Typ.
1.0
1.0
Max.
—
—
Unit
µF
µF
Conditions
The use of ceramic capacitors is
recommended.
The use of ceramic capacitors is
recommended.
Symbol
V
IN
IOUT
Ratings
2.5 to 5.5
0 to 150
Unit
V
mA
*2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value cannot change as time progresses.
●Electrical
characteristics
*5
(Unless otherwise specified, Ta = 25°C, V
IN
= V
OUT
+ 1.0 V , STBY = 1.5 V, C
IN
= 1 µF, C
O
= 1 µF)
Limits
Symbol
Unit
Parameter
Conditions
Min.
Typ.
Max.
Output voltage 1
V
OUT
0.99
V
OUT
1
V
OUT
- 25 mV
V
OUT
V
OUT
2
0.97
IGND
ICCST
RR
VSAT
VDLI
VDLO
ILMAX
ISHORT
ISTBY
ON
OFF
VSTBH
VSTBL
—
—
—
—
—
—
—
—
0.5
1.2
-0.2
V
OUT
V
OUT
1.01
V
OUT
+ 25 mV
V
OUT
1.03
72
1.0
—
150
20
30
—
—
3.6
V
IN
0.2
V
I
OUT
= 1 mA, Ta = 25°C,
BH25RB1WGUT or higher
I
OUT
= 1mA, Ta = 25°C,
BH15, 18RB1WGUT
I
OUT
= 1 mA
Ta = -40°C to 85°C
*3
I
OUT
= 0 mA
Ta = -40°C to 85°C
*3
STBY = 0 V
VRR = -20 dBV, fRR = 1 kHz,
I
OUT
= 10 mA
V
IN
= 0.98
V
OUT
, I
OUT
= 100 mA
(Excluding BH15, 18RB1WGUT)
I
OUT
= 10 mA
V
IN
= V
OUT
+ 0.5 V to 5.5 V
*4
I
OUT
= 1 mA to 100 mA
V
O
= V
OUT
0.98
V
O
= 0 V
Ta = -40°C to 85°C
*3
Ta = -40°C to 85°C
*3
Ta = -40°C to 85°C
*3
Output voltage 2
Circuit current
Circuit current (STBY)
Ripple rejection ratio
Dropout voltage
Line regulation
Load regulation
Overcurrent protection limit current
Short current
STBY pin current
STBY control voltage
V
OUT
34
—
63
100
2
2
300
40
1.3
—
—
V
µA
µA
dB
mV
mV
mV
mA
mA
µA
V
V
* This IC is not designed to be radiation-resistant.
*3: These specifications are guaranteed by design.
*4: For BH15, 18RB1WGUT, VIN = 3.0 V to 5.5 V.
*5: For BH15, 18RB1WGUT, VIN = 3.5 V.
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© 2011 ROHM Co., Ltd. All rights reserved.
2/8
2011.01 - Rev.C
BH□□RB1WGUT series
●Typical
characteristics
4.0
3.5
Output Voltage VOUT[V]
Technical Note
4.0
3.5
Output Voltage VOUT[V]
Output Voltage VOUT[V]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
Input Voltage VIN[V]
5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
Input Voltage VIN[V]
5
0
1
2
3
4
Input Voltage VIN[V]
5
Fig. 1 Output Voltage vs Input Voltage
(BH15RB1WGUT)
60
50
Fig. 2 Output Voltage vs Input Voltage
(BH28RB1WGUT)
60
50
GND Current IGND[µA]
40
30
20
10
0
Fig. 3 Output Voltage vs Input Voltage
(BH33RB1WGUT)
60
50
GND Current IGND[µA]
40
30
20
10
0
GND Current IGND[µA]
40
30
20
10
0
0
1
2
3
4
Input Voltage VIN[V]
5
0
1
2
3
4
Input Voltage VIN[V]
5
0
1
2
3
4
Input Voltage VIN[V]
5
Fig. 4 GND Current vs Input Voltage
(BH15RB1WGUT)
3.5
3.0
Fig. 5 GND Current vs Input Voltage
(BH28RB1WGUT)
3.5
3.0
Output Voltage VOUT[V]
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 6 GND Current vs Input Voltage
(BH33RB1WGUT)
3.5
3.0
Output Voltage VOUT[V]
2.5
2.0
1.5
1.0
0.5
0.0
Output Voltage VOUT[V]
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
Output Current IOUT[mA]
400
0
100
200
300
Output Current IOUT[mA]
400
0
100
200
300
Output Current IOUT[mA]
400
Fig. 7 Output Voltage vs Output Current
(BH15RB1WGUT)
200
Fig. 8 Output Voltage vs Output Current
(BH28RB1WGUT)
0.5
Fig. 9 Output Voltage vs Output Current
(BH33RB1WGUT)
Dropout Voltage VSAT[V]
Dropout Voltage VSAT[V]
0
50
100
Output Current IOUT[mA]
150
150
0.4
0.3
100
0.2
50
0.1
0
0.0
0
50
100
Output Current IOUT[mA]
150
Fig. 10 Dropout Voltage vs Output Current
(BH28RB1WGUT)
Fig. 11 Dropout Voltage vs Output Current
(BH33RB1WGUT)
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3/8
2011.01 - Rev.C
BH□□RB1WGUT series
Technical Note
1.60
2.90
3.40
Output Voltage VOUT[V]
Output Voltage VOUT[V]
Output Voltage VOUT[V]
1.55
2.85
3.35
1.50
2.80
3.30
1.45
2.75
3.25
IOUT=1mA
3.20
IOUT=1mA
1.40
-50
-25
0
25
50
Temp[
℃
]
75
100
2.70
-50
-25
0
IOUT=1mA
25
50
Temp[
℃
]
75
100
-50
-25
0
25
50
Temp[
℃
]
75
100
Fig. 12 Output Voltage vs Temperature
(BH15RB1WGUT)
80
70
Fig. 13 Output Voltage vs Temperature
(BH28RB1WGUT)
80
70
Ripple Rejection R.R.[dB]
60
50
40
30
20
10
Fig. 14 Output Voltage vs Temperature
(BH33RB1WGUT)
80
70
Ripple Rejection R.R.[dB]
60
50
40
30
20
10
Ripple Rejection R.R.[dB]
60
50
40
30
20
10
Co=1.0μF
Io=10mA
100
1k
10 k
Frequency f[Hz]
100 k
1M
Co=1.0μF
Io=10mA
100
1k
10 k
100 k
Frequency f[Hz]
1M
Co=1.0μF
Io=10mA
100
1k
10 k
100 k
Frequency f[Hz]
1M
Fig. 15 Ripple Rejection
(BH15RB1WGUT)
Fig. 16 Ripple Rejection
(BH28RB1WGUT)
Fig. 17 Ripple Rejection
(BH33RB1WGUT)
IOUT = 1 mA
→
30 mA
IOUT = 1 mA
→
30 mA
IOUT = 1 mA
→
30 mA
VOUT
50 mV/div
VOUT
50 mV/div
VOUT
50 mV/div
50
μs/div
50
μs/div
50
μs/div
Fig. 18 Load Response (Co = 1.0
μF)
(BH15RB1WGUT)
Fig. 19 Load Response (Co = 1.0
μF)
(BH28RB1WGUT)
Fig, 20 Load Response (Co = 1.0
μF)
(BH33RB1WGUT)
1 V/div
STBY
STBY
1 V/div
STBY
1 V/div
Co = 1
μF
Co = 1
μF
1 V/div
R
L
= 2.8 kΩ
Co = 1
μF
1 V/div
R
L
= 3.3 kΩ
1 V/div
R
L
= 1.5 kΩ
VOUT
Co = 2.2
μF
100
μs/div
VOUT
Co = 2.2
μF
100
μs/div
VOUT
Co = 2.2
μF
100
μs/div
Fig. 21 Output Voltage Rise Time
(BH15RB1WGUT)
Fig. 22 Output Voltage Rise
Time
(BH28RB1WGUT)
Fig. 23 Output Voltage Rise Time
(BH33RB1WGUT)
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© 2011 ROHM Co., Ltd. All rights reserved.
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2011.01 - Rev.C
BH□□RB1WGUT series
●Block
Diagram, Recommended Circuit Diagram, and Pin Assignment Diagram
BH□□RB1WGUT
VIN
VIN
B2
VO LTAG E
R EF ERE NCE
Technical Note
Pin No.
B2
B1
VOUT
B1
Symbol
V
IN
V
OUT
GND
STBY
1PIN MARK
Function
Power supply input
Voltage output
Ground
Output voltage on/off control
(High: ON, Low: OFF)
Cin
TH ERM A L
P RO T ECT IO N
VOUT
A1
A2
G ND
A1
Co
O VER CU RRE NT
P RO TE CTIO N
VSTBY
1
A
2
STBY
A2
C O NT RO L
BLO CK
Cin: 1.0 µF
Co: 1.0 µF
B
TOP VIEW (Mark side)
Fig. 24
●Power
Dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include output power dissipation characteristics and internal IC power consumption. In
the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the
junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the
IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation.
Calculating the maximum internal IC power consumption (P
MAX
)
P
MAX
= (V
IN
- V
OUT
)
I
OUT
(MAX.)
V
IN
: Input voltage
V
OUT
: Output voltage
I
OUT
(MAX): Output current
2. Power dissipation/power dissipation reduction (Pd)
VCSP60N1
0.6
530 mW
Board: 7 mm
7 mm
0.8 mm
Material: Glass epoxy PCB
0.4
Pd[W]
0.2
0
0
25
50
75
100
125
*Circuit design should allow a sufficient margin for the temperature range for PMAX < Pd.
Ta[
℃
]
Fig. 25 VCSP60N1 Power Dissipation/Power Dissipation Reduction (Example)
●Input
Output Capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors are used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias
characteristics. Use X5R or X7R ceramic capacitors, which offer good temperature and DC bias characteristics as well as
stable high voltages.
Typical ceramic capacitor characteristics
120
100
120
Capacitance rate of change (%)
(%)
Capacitance rate of change
Capacitance rate of change (%)
Capacitance rate of change (%)]
100
50 V
torelance
50 V torelance
95
100
Capacitance rate of change (%)
静電容量変化率
[%]
80
90
80
X7R
X5R
Y5V
16 V torelance
10 V torelance
60
85
60
10 V torelance
40
16 V torelance
80
40
20
75
20
0
0
1
70
0
-25
0
25
Temp[℃]
50
75
DC bias Vdc (V)
2
3
4
0
1
DC bias Vdc (V)
2
3
4
Fig. 26 Capacitance vs Bias (Y5V)
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© 2011 ROHM Co., Ltd. All rights reserved.
Fig.27 Capacitance vs Bias
(X5R, X7R)
Fig. 28 Capacitance vs Temperature
(X5R, X7R, Y5V)
5/8
2011.01 - Rev.C
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