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BSB008NE2LXXT

Description
MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
CategoryDiscrete semiconductor    The transistor   
File Size1MB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSB008NE2LXXT Overview

MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS

BSB008NE2LXXT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionCHIP CARRIER, R-MBCC-N3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time26 weeks
Other featuresULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)600 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)180 A
Maximum drain-source on-resistance0.0008 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)89 W
Maximum pulsed drain current (IDM)400 A
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS
TM
OptiMOS
TM
Power-MOSFET,25V
BSB008NE2LX
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket

BSB008NE2LXXT Related Products

BSB008NE2LXXT BSB008NE2LXXUMA1
Description MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction CHIP CARRIER, R-MBCC-N3 CHIP CARRIER, R-MBCC-N3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features ULTRA LOW RESISTANCE ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas) 600 mJ 600 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 25 V 25 V
Maximum drain current (ID) 180 A 180 A
Maximum drain-source on-resistance 0.0008 Ω 0.0008 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-MBCC-N3 R-MBCC-N3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Minimum operating temperature -40 °C -40 °C
Package body material METAL METAL
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 89 W 89 W
Maximum pulsed drain current (IDM) 400 A 400 A
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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