The DG9232, 9233 is a single-pole/single-throw monolithic
CMOS analog device designed for high performance
switching of analog signals. Combining low power, high
speed (t
ON
: 35 ns, t
OFF
: 20 ns), low on-resistance (R
DS(on)
:
20
)
and small physical size, the DG9232, 9233 is ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
The DG9232, 9233 is built on Vishay Siliconix’s low voltage
BCD-15 process. Minimum ESD protection, per method
3015.7 is 2000 V. An epitaxial layer prevents latchup.
Break-before -make is guaranteed for DG9232. 9233.
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
FEATURES
•
Low voltage operation (+ 2.7 V to + 5 V)
•
•
•
•
•
•
•
•
Low on-resistance - R
DS
(on): 20
Fast switching - t
ON
: 35 ns, t
OFF
: 20 ns
Low leakage - I
COM(on)
: 200 pA max.
Low charge injection - Q
INJ
: 1 pC
Low power consumption
TTL/CMOS compatible
ESD protection > 2000 V (method 3015.7)
Available in MSOP-8 and SOIC-8
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
•
Battery operated systems
Portable test equipment
Sample and hold circuits
Cellular phones
Communication systems
Military radio
PBX, PABX guidance and control systems
BENEFITS
•
•
•
•
Reduced power consumption
Simple logic interface
High accuracy
Reduce board space
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NC
1
COM
1
IN
2
GND
1
2
3
4
8
7
6
5
V+
IN
1
COM
2
NC
2
TRUTH TABLE
- DG9232
Logic
0
1
Logic "0"
0.8
V
Logic "1"
2.4
V
Switch
On
Off
Top View
NO
1
COM
1
IN
2
GND
1
2
3
4
8
7
6
5
V+
IN
1
COM
2
NO
2
TRUTH TABLE
- DG9233
Logic
0
1
Logic "0"
0.8
V
Logic "1"
2.4
V
Switch
Off
On
Top View
ORDERING INFORMATION
Temp Range
Package
Part Number
DG9232DY
DG9232DY-E3
DG9232DY-T1
DG9232DY-T1-E3
DG9233DY
DG9233DY-E3
DG9233DY-T1
DG9233DY-T1-E3
DG9232DQ-T1-E3
DG9233DQ-T1-E3
SOIC-8
- 40 °C to 85 °C
MSOP-8
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70837
S11-0984–Rev. F, 23-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9232, DG9233
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
IN, COM, NC, NO
a
Continuous Current (Any terminal)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
ESD (Method 3015.7)
Storage Temperature
Power Dissipation (Packages)
b
D suffix
8-pin narrow body SOIC
c
Limit
- 0.3 to + 13
- 0.3 to (V+ + 0.3)
± 20
± 40
> 2000
- 65 to 125
400
Unit
V
mA
V
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 70 °C.
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
R
DS(on)
Match
d
R
DS(on)
Flatness
d
NO or NC Off Leakage Current
g
COM Off Leakage Current
g
Channel-On Leakage Current
g
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
Crosstalk
NC and NO Capacitance
Channel-On Capacitance
COM-Off Capacitance
Power Supply
Positive Supply Range
Power Supply Current
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
R
DS(on)
Flatness
I
NO/NC(off)
I
COM(off)
I
COM(on)
I
INL
or I
INH
t
ON
V
NO
or V
NC
= 1.5 V
t
OFF
Q
INJ
OIRR
X
TALK
C
S(off)
C
COM(on)
C
COM(off)
V+
I+
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
V
NO
or V
NC
= 1.5 V, V+ = 2.7 V
I
COM
= 5 mA
V
NO
or V
NC
= 1.5 V
V
NO
or V
NC
= 1 and 2 V
V
NO
or V
NC
= 1 V/2 V, V
COM
= 2 V/1 V
V
COM
= 1 V/2 V, V
NO
or V
NC
= 2 V/1 V
V
COM
= V
NO
or V
NC
= 1 V/2 V
V+ = 3 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
Temp.
a
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
2.7
V+ = 3.3 V, V
IN
= 0 or 3.3 V
- 100
- 5000
- 100
- 5000
- 200
- 10000
D Suffix
- 40 °C to 85 °C
Min.
c
0
30
0.4
4
5
5
10
Typ.
b
Max.
c
3
50
80
2
8
100
5000
100
5000
200
10000
Unit
V
pA
1
50
20
1
- 74
- 90
7
20
13
120
200
50
120
5
µA
ns
pC
dB
f = 1 MHz
pF
12
1
V
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
g. Guaranteed by 5 V leakage tests, not production tested.
www.vishay.com
2
Document Number: 70837
S11-0984–Rev. F, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9232, DG9233
Vishay Siliconix
SPECIFICATIONS
(V+ = 5 V)
Test Conditions
Otherwise Unless Specified
Parameter
Analog Switch
Analog Signal Range
d
Drain-Source On-Resistance
R
DS(on)
Match
d
R
DS(on)
Flatness
d
NO or NC Off Leakage Current
g
COM Off Leakage Current
Channel-On Leakage Current
Digital Control
Input Current
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
d
Off-Isolation
Crosstalk
NC and NO Capacitance
Channel-On Capacitance
COM-Off Capacitance
Power Supply
Positive Supply Range
Power Supply Current
V+
I+
V+ = 5.5 V, V
IN
= 0 or 5.5 V
2.7
12
1
V
µA
t
ON
V
NO
or V
NC
= 3.0 V
t
OFF
Q
INJ
OIRR
X
TALK
C
(off)
C
D(on)
C
D(off)
f = 1 MHz
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
R
L
= 50
,
C
L
= 5 pF, f = 1 MHz
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
35
20
2
- 74
- 90
7
20
13
pF
75
150
50
100
5
ns
I
INL
or I
INH
Full
1
µA
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
R
DS(on)
Flatness
I
NO/NC(off)
I
COM(off)
I
COM(on)
V
NO
or V
NC
= 3.5 V, V+ = 4.5 V
I
COM
= 5 mA
V
NO
or V
NC
= 3.5 V
V
NO
or V
NC
= 1, 2 and 3 V
V
NO
or V
NC
= 1 V/4 V, V
COM
= 4 V/1 V
V
COM
= 1 V/4 V, V
NO
or V
NC
= 4 V/1 V
V
COM
= V
NO
or V
NC
= 1 V/4 V
V+ = 5 V, ± 10 %, V
IN
= 0.8 V or 2.4 V
e
Temp.
a
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
- 100
- 5000
- 100
- 5000
- 200
- 10000
D Suffix
- 40 °C to 85°C
Min.
c
0
20
0.4
2
10
10
Typ.
b
Max.
c
5
30
50
2
6
100
5000
100
5000
200
10000
Unit
V
pA
pC
dB
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Difference of min and max values.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70837
S11-0984–Rev. F, 23-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9232, DG9233
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
2.0
1.5
1.0
V+ = 3 V
3000
2500
2000
I
SUPPLY
(A)
0.5
Q
INJ
(pC)
0.0
- 0.5
- 1.0
- 1.5
- 2.0
0.0
1500
1000
500
0
V+ = 3 V
- 500
V+ = 5 V
0.5
1.0
1.5
V
COM
2.0
2.5
3.0
0
1
2
V
IN
3
4
5
Charge Injection
10 nA
- 40
Supply Current vs. V
IN
1 nA
OFF-Isolation (dB)
I
COM(off)
(A)
- 60
100 pA
I
COM(off)
10 pA
I
COM(on)
- 80
- 100
1 pA
- 120
0.1 pA
25
45
65
85
105
125
- 140
0.001 M
0.01 M
0.1 M
Frequency (Hz)
1M
10 M
Temperature (°C)
Leakage Current vs. Temperature
2.5
2.0
1.5
1.0
I
OFF
(pA)
0.5
0.0
ñ0.5
ñ1.0
ñ1.5
ñ2.0
ñ2.5
0
1
2
V
COM
3
4
5
12
0
I
NO/NC
R
DS(on)
(W )
I
COM
V+ = 5 V
27
30
Off-Isolation vs. Frequency
V+ = 3 V
24
21
18
V+ = 5 V
15
1
2
V
COM
3
4
5
Off-Leakage vs. Voltage at 25 °C
www.vishay.com
4
R
DS
vs. V
COM
Document Number: 70837
S11-0984–Rev. F, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG9232, DG9233
Vishay Siliconix
TYPICAL CHARACTERISTICS
T
A
= 25 °C, unless otherwise noted
35
85
C
28
25
C
40
C
t
ON
/ t
OFF
(ns)
70
V+ = 3 V
60
t
ON
50
40
30
t
OFF
20
7
10
0
0.0
0
- 60
R
DS(on)
()
21
14
0.5
1.0
1.5
V
COM
2.0
2.5
3.0
- 30
0
30
60
90
120
Temperature (°C)
R
DS
vs. V
COM
120
2.25
2.00
1.75
V
IN
(sw)
80
t (ns)
1.50
1.25
1.00
20
t
OFF
0.75
0.50
2.0
2.5
3.0
V+
3.5
4.0
4.5
5.0
2
Switching Time vs. Temperature
100
60
t
ON
40
0
1.5
3
4
V+
5
6
t
ON/tOFF
vs. Power Supply Voltage
Input Switching Point vs. Power Supply Voltage
Document Number: 70837
S11-0984–Rev. F, 23-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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